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参数资料
| 型号： | SV1512FKR |
| 厂商： | DYNEX SEMICONDUCTOR LTD |
| 元件分类： | 整流器 |
| 英文描述： | 205 A, 1200 V, SILICON, RECTIFIER DIODE, DO-8 |
| 封装： | DO-8, 1 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 92K |
| 代理商： | SV1512FKR |
4/6
www.dynexsemi.com
SV15..F
Fig.4 Recovered charge
Fig.5 Typical reverse recovery current vs rate of rise of
forward current
Fig.6 Maximum (limit) transient thermal impedance -
junction to case - (C/W)
1
10
100
1000
Rate of rise of reverse current dIR/dt - (A/s)
100
10
1000
Reverse
recovered
charge
Q
rr
-
(
C)
Conditions:
Tj = 150C,
VR = 100V
IF = 2000A
IF = 1000A
IF = 500A
IF = 200A
IF = 100A
I
RR
QS
t
p = 1ms
I
F
dI
R/dt
Q
S =
50s
0
1
10
100
1000
Rate of rise of reverse current dIR/dt - (A/s)
10
100
1000
Reverse
recovery
current
I
rr
-
(A)
Conditions:
Tj = 150C,
VR = 100V
IF = 2000A
IF = 1000A
IF = 500A
IF = 200A
IF = 100A
100
10
1
0.1
0.01
Time - (s)
0.1
0.01
0.001
Thermal
impedance
-
junction
to
case,
Z
th(j-c)
-
(
C/W)
d.c.
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相关代理商/技术参数 |
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|---|---|
| SV1512FM | 制造商:DYNEX 制造商全称:Dynex Semiconductor 功能描述:Fast Recovery Diode |
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