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参数资料
| 型号： | SV2010MR |
| 厂商： | DYNEX SEMICONDUCTOR LTD |
| 元件分类： | 整流器 |
| 英文描述： | 220 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8 |
| 封装： | DO-8, 1 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 132K |
| 代理商： | SV2010MR |
SV20
2/7
SURGE RATINGS
Conditions
10ms half sine; T
case = 175
oC
V
R = 50% VRRM - 1/4 sine
10ms half sine; T
case =175
oC
V
R = 0
Max.
Units
Symbol
Parameter
I
FSM
Surge (non-repetitive) forward current
I
2tI2t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2t
I
2t for fusing
A
2s
4.0
kA
51.2 x 103
A2s
3.2
kA
80.0 x 10
3
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max.
Units
oC/W
-
0.08
Thermal resistance - case to heatsink
R
th(c-h)
Thermal resistance - junction to case
R
th(j-c)
Symbol
Parameter
-
0.23
oC/W
175
oC
T
vj
Virtual junction temperature
T
stg
Storage temperature range
-55
200
oC
-
175
oC
Mounting torque 15.0Nm
with mounting compound
Forward (conducting)
Reverse (blocking)
dc
Mounting Torque
-
12.0
15.0
Nm
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
C
-
Q
S
Total stored charge
Symbol
V
FM
I
RRM
I
RM
Peak recovery current
70*
-
A
200*
At V
RRM, Tcase = 175
oC-
20
mA
-
1.4
V
At 600A peak, T
case = 25
oC
Conditions
Typ.
Max.
Units
At T
vj = 175C
-
V
TO
Threshold voltage
r
T
Slope resistance
1.0
m
At T
vj = 175C
-
0.8
V
t
rr
reverse recovery time
5.5*
-
s
I
F = 100A, dIRR/dt = 20A/s, Tcase = 25C
*Typical values.
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