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参数资料
| 型号： | SV5806US |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 2.5 A, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, GLASS, MELF-A, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 39K |
| 代理商： | SV5806US |
221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 158, REV. F
Ultrafast Recovery Rectifier
Hermetic, non-cavity glass package
Metallurgically bonded
Operating and Storage Temperature: -65oC to +175o
MAX. RATINGS / ELECTRICAL CHARACTERISTICS
All ratings are at TA = 25
oC unless otherwise specified.
SJ
SX
SV
1N5802,US thru 1N5806,US
Rating
Symbol
Condition
Max
Units
WORKING PEAK REVERSE VOLTAGE
1N5802, US
1N5804, US
1N5806, US
VWM
50
100
150
Volts
AVERAGE RECTIFIED FORWARD CURRENT
Io
TL= 75
oC
2.5
Amps
PEAK FORWARD SURGE CURRENT
IFSM
Tp=8.3ms
35
A(pk)
MAXIMUM REVERSE CURRENT
IR @ VRWM
Tj = 25
oC
1.0
μAmps
MAXIMUM REVERSE CURRENT
IR @ VRWM
Tj = 150
oC
175
μAmps
MAX. PEAK FORWARD VOLTAGE (PULSED)
300
μsec pulse, duty cycle < 2%
VFM
IFM=1.0A
IFM=2.5A
0.875
0.975
Volts
MAXIMUM REVERSE RECOVERY TIME
Trr
IF=IRM=0.5A
IREC=0.05A
25
ns
FORWARD RECOVERY VOLTAGE
VFRM
IF=250mA
tr=12ns
2.2
Volts
THERMAL RESISTANCE (Axial)
1N5802 thru 1N5806
R
θ
JL
L=.375
36
oC/W
THERMAL RESISTANCE (MELF)
1N5802US thru 1N5806US
R
θ
JC
L=0
13
oC/W
相关PDF资料 |
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|---|---|
| SJ5804 | 2.5 A, SILICON, RECTIFIER DIODE |
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