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参数资料
| 型号： | SVD102 |
| 厂商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | X Band VCO, PLO Hyperabrupt Junction Type GaAs Varactor Diode(X频带VCO，PLO结型砷化镓变容二极管) |
| 中文描述： | X波段的VCO，解放军Hyperabrupt联合型砷化镓变容二极管（X频带的VCO，解放军结型砷化镓变容二极管） |
| 文件页数： | 1/2页 |
| 文件大小： | 70K |
| 代理商： | SVD102 |
SVD102
Ordering number : EN5767
X Band VCO, PLO
Hyperabrupt Junction Type GaAs Varactor Diode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
90597GI (KOTO) No.5767-1/2
Package Dimensions
unit: mm
1274
[SVD102]
1 : Cathode
2 : Anode
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Peak Reverse Voltage
Average Rectified Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Mounting Temperature
Symbol
V
rm
I
fm
P
D
Tj
Tstg
Tm
Conditions
Ratings
Unit
V
mA
mW
°C
°C
°C
30
50
500
150
–65 to +150
230/10s
Electrical Characteristics
at Ta=25°C
Parameter
Symbol
Conditions
Ratings
typ
min
max
1.4
Unit
Forward Voltage
Reverse Voltage
Reverse Current
Interterminal Capacitance
Capacitance Ratio
V
F
V
R
I
R
C
t0V
C
j0V
/ C
j25V
I
F
=10mA
I
R
=10μA
V
R
=25V
V
R
=0V, f=1MHz
V
R
=0V, 25V, f=1MHz
V
V
nA
pF
–27
100
5
5
7
8
Features
High Q.
High capacitance ratio.
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