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参数资料
| 型号： | SVD301 |
| 元件分类： | 变容二极管 |
| 英文描述： | X BAND, 2.6 pF, 27 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| 封装： | CERC-2, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 37K |
| 代理商： | SVD301 |
SVD301
No.5500-1/2
Features
High Q.
High capacitance ratio.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Peak Reverse Voltage
Vrm
30
V
Peak Forward Current
IF
30
mA
Allowable Power Dissipation
PD
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--65 to +150
°C
Mounting Temperature
Tm
10s
230
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Forward Voltage
VF
IF=10mA
1.4
V
Reverse Voltage
VR
IR=10A27
V
Reverse Current
IR
VR=25V
250
nA
Interterminal Capacitance
Ct0V
VR=0V, f=1MHz
2.2
2.6
pF
Capacitance Ratio
Cj0V / Cj25V VR=0V, 25V, f=1MHz
17
20
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN5500C
Package Dimensions
unit : mm
1274B
[SVD301]
90503 TS IM TA-3713 / D2502 TS IM TA-3693 / 90597 GI (KOTO)
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
1 : Cathode
2 : Anode
SANYO : CERC-2
1.35
1.43
1.5
0.1
0.9
0.4
2
1
1.8
0.5
SANYO Semiconductors
DATA SHEET
SVD301
Hyperabrupt Junction Type GaAs Varactor Diode
X Band VCO, PLO
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相关代理商/技术参数 |
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|---|---|
| SVD302 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:X Band VCO, PLO |
| SVD5804NT4G | 功能描述:MOSFET NFET 40V SPCL TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SVD5N60AF | 制造商:SILAN 制造商全称:Silan Microelectronics Joint-stock 功能描述:5A, 600V NCHANNEL MOSFET |
| SVD5N60AT | 制造商:SILAN 制造商全称:Silan Microelectronics Joint-stock 功能描述:5A, 600V NCHANNEL MOSFET |
| SVD8N60F | 制造商:SILAN 制造商全称:Silan Microelectronics Joint-stock 功能描述:8A, 600V NCHANNEL MOSFET |
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