参数资料
型号: SW-442PIN
英文描述: GaAs SPDT Terminated Switch DC - 3.0 GHz
中文描述: 终止砷化镓单刀双掷开关直流- 3.0吉赫
文件页数: 2/3页
文件大小: 112K
代理商: SW-442PIN
GaAs SPDT Terminated Switch, DC - 3.0 GHz
SW-442
M/A-COM Division of AMP Incorporated North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Functional Schematic
Positive Control Voltage
Absolute Maximum Ratings
Parameter
Input Power (0.5 - 3.0 GHz)
3V Control
5V Control
Operating Voltage
1
Absolute Maximum
+30 dBm
+33 dBm
+8.5 Volts
Operating Temperature
-40°C to +85°C
Storage Temperature
-65°C to +150°C
1. Exceeding any one or combination of these limits may cause
permanent damage.
Truth Table
Mode
(Control)
Positive
1
V1
V2
RFC - RF1
RFC - RF2
0±0.2V
+2.5 to +8V
0±0.2V
-2.5V to -8V
+2.5 to +8V
0±0.2V
-2.5V to -8V
0±0.2V
On
Off
Off
On
Off
On
On
Off
Negative
2
1. External DC blocking capacitors are required on all RF ports and
GND. GND capacitors can be used with postive control voltage to
resonate lead inductance for improved isolation.
2. If negative control is used, DC blocking capacitors and GND
capacitors are not required.
PIN Configuration
PIN No.
Function
Description
1
RF1
RF in/out
2
GND
RF Ground
3
RF2
RF in/out
4
V2
V Control 2
5
RFC
RF COMMON
6
V1
V Control 1
Handling Procedures
The following precautions should be observed to avoid damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are ESD sensitive and can
be damaged by static electricity. Proper ESD techniques should
be used when handling these devices.
RF1 GND RF2
V1
RFC
V2
PIN 1
C=39pF
C=39pF
C=39pF
CGND
C=100pF
C=100pF
Functional Schematic
Negative Control Voltage
RF1 GND RF2
V1
RFC
V2
PIN 1
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