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| 型号： | SYS32512ZK-30 |
| 英文描述： | Ultra Low Capacitance Transient Voltage Suppressor Diodes |
| 中文描述： | X32号的SRAM模块 |
| 文件页数： | 6/7页 |
| 文件大小： | 206K |
| 代理商： | SYS32512ZK-30 |
ISSUE 1.5 : December 1998
SYS321000ZK/LK - 012/015/20/25
6
Write Cycle No.2 Timing Waveform
(1,5)
AC Write Characteristics Notes
(1) All write cycle timing is referenced from the last valid address to the first transition address.
(2) All writes occur during the overlap of CS1~4 and WE low.
(3) If OE, CS1~4, and WE are in the Read mode during this period, the I/O pins are low impedance state.
Inputs of opposite phase to the output must not be applied because bus contention can occur.
(4) Dout is the Read data of the new address.
(5) OE is continuously low.
(6) Address is valid prior to or coincident with CS1~4 and WE low, too avoid inadvertant writes.
(7) CS1~4 or WE must be high during address transitions.
(8) When CS1~4 are low : I/O pins are in the output state. Input signals of opposite phase leading to the
output should not be applied.
(9) Defined as the time at which the outputs achieve open circuit conditions and are not referenced to
output voltage levels. These parameters are sampled and not 100% tested.
t
AW
WP(2)
t
CW
WR(7)
WC
t
AS(6)
DW
DH
OH
t
OW
WHZ(3,9)
Don't
Care
t
t
t
t
Address
CS1~4
WE
Dout
Din
t
t
t
High-Z
High-Z
(4)
(8)
Data Valid
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| SYS32512ZK-35 | Ultra Low Capacitance Transient Voltage Suppressor Diodes |
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相关代理商/技术参数 |
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| SYS32512ZK-35 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 SRAM Module |
| SYS32512ZKI-010 | 制造商:MOSAIC 制造商全称:MOSAIC 功能描述:512 K x 32 Static RAM |
| SYS32512ZKI-012 | 制造商:MOSAIC 制造商全称:MOSAIC 功能描述:512 K x 32 Static RAM |
| SYS32512ZKI-015 | 制造商:MOSAIC 制造商全称:MOSAIC 功能描述:512 K x 32 Static RAM |
| SYS32512ZKI-020 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 SRAM Module |
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