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参数资料
| 型号： | SZBZX84C33LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 33 V, 0.225 W, SILICON, BIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/7页 |
| 文件大小： | 176K |
| 代理商： | SZBZX84C33LT3 |
Semiconductor Components Industries, LLC, 2009
July, 2009 Rev. 13
1
Publication Order Number:
BZX84C2V4LT1/D
BZX84B4V7LT1,
BZX84C2V4LT1 Series
Zener Voltage Regulators
225 mW SOT23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Features
225 mW Rating on FR4 or FR5 Board
Zener Breakdown Voltage Range 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 KV) per Human Body Model
Tight Tolerance Series Available (See Page 4)
PbFree Packages are Available
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V0
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Total Power Dissipation on FR5 Board,
Derated above 25°C
Thermal Resistance, JunctiontoAmbient
PD
RqJA
225
1.8
556
mW
mW/°C
°C/W
Total Power Dissipation on Alumina
Derated above 25°C
Thermal Resistance, JunctiontoAmbient
PD
RqJA
300
2.4
417
mW
mW/°C
°C/W
Junction and Storage Temperature Range
TJ, Tstg
65 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
Device
Package
Shipping
ORDERING INFORMATION
BZX84CxxxLT1
SOT23
3000/Tape & Reel
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
DEVICE MARKING INFORMATION
BZX84CxxxLT3
SOT23
10,000/Tape & Reel
BZX84BxxxLT1
SOT23
3000/Tape & Reel
BZX84BxxxLT3
SOT23
10,000/Tape & Reel
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
BZX84CxxxLT1G
SOT23
(PbFree)
3000/Tape & Reel
BZX84BxxxLT1G
SOT23
(PbFree)
3000/Tape & Reel
BZX84CxxxLT3G
10,000/Tape & Reel
BZX84BxxxLT3G
10,000/Tape & Reel
SOT23
(PbFree)
SOT23
(PbFree)
SOT23
CASE 318
STYLE 8
3
Cathode
1
Anode
MARKING
DIAGRAM
3
1
2
1
xxx M G
G
xxx
= Device Code
M
= Date Code*
G
= PbFree Package
* Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
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| SZBZX84C20LT1 | 20 V, 0.225 W, SILICON, BIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
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| SZBZX84C15LT1 | 15 V, 0.225 W, SILICON, BIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SZBZX84C33LT3G | 功能描述:稳压二极管 ZEN REG .225W SPCL RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| SZBZX84C36ET1G | 功能描述:稳压二极管 ZEN REG .225W 36V RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| SZBZX84C36LT1 | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| SZBZX84C36LT1G | 功能描述:稳压二极管 ZEN REG .225W 36V RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| SZBZX84C36LT3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
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