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参数资料
| 型号： | SZMMBZ15VDLT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, TO-236, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 85K |
| 代理商： | SZMMBZ15VDLT1 |
MMBZ15VDLT1, MMBZ27VCLT1
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Ppk
40
Watts
Derate above 25
°C
°PD°
225
1.8
°mW°
mW/
°C
Thermal Resistance Junction-to-Ambient
RqJA
556
°C/W
Derate above 25
°C
°PD°
300
2.4
°mW
mW/
°C
Thermal Resistance Junction-to-Ambient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
-55 to +150
°C
Lead Solder Temperature - Maximum (10 Second Duration)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. FR-5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
VBR
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
Uni-Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Device
Marking
VRWM
IR @ VRWM
Breakdown Voltage
VBR
@ IT
VC
IPP
Volts
nA
Min
Nom
Max
mA
V
A
mV/
5C
MMBZ15VDLT1, G*
15D
12.8
100
14.3
15
15.8
1.0
21.2
1.9
12
(VF = 1.1 V Max @ IF = 200 mA)
Device
Marking
VRWM
IR @ VRWM
Breakdown Voltage
VBR
@ IT
VC
IPP
Volts
nA
Min
Nom
Max
mA
V
A
mV/
5C
MMBZ27VCLT1, G*
27C
22
50
25.65
27
28.35
1.0
38
1.0
26
*The “G” suffix indicates Pb-Free package available.
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
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| SZMMBZ18VALT3G | 功能描述:TVS二极管阵列 ZEN REG .225W 12V RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
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