参数资料
型号: SZP6SMB160AT3G
厂商: ON Semiconductor
文件页数: 2/7页
文件大小: 0K
描述: TVS ZENER 600W 160V UNIDIR SMB
标准包装: 2,500
电压 - 反向隔离(标准值): 136V
电压 - 击穿: 152V
功率(瓦特): 600W
电极标记: 单向
安装类型: *
封装/外壳: *
供应商设备封装: *
包装: *
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T L = 25 ° C, Pulse Width = 1 ms
DC Power Dissipation @ T L = 75 ° C Measured Zero Lead Length (Note 2)
Derate Above 75 ° C
Thermal Resistance from Junction ? to ? Lead
DC Power Dissipation (Note 3) @ T A = 25 ° C
Derate Above 25 ° C
Thermal Resistance from Junction ? to ? Ambient
Forward Surge Current (Note 4) @ T A = 25 ° C
Operating and Storage Temperature Range
Symbol
P PK
P D
R q JL
P D
R q JA
I FSM
T J , T stg
Value
600
3.0
40
25
0.55
4.4
226
100
? 65 to +150
Unit
W
W
mW/ ° C
° C/W
W
mW/ ° C
° C/W
A
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 m s, non ? repetitive
2. 1 ″ square copper pad, FR ? 4 board
3. FR ? 4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted, V F = 3.5 V Max. @ I F
(Note 4) = 30 A, V F = 1.3 V Max. @ I F (Note 4) = 3 A) (Note 5)
I
Symbol
I PP
V C
V RWM
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
Working Peak Reverse Voltage
I F
I R V F
I R
V BR
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
V C V BR V RWM
I T
V
I T
Q V BR
Test Current
Maximum Temperature Coefficient of V BR
I F
Forward Current
I PP
V F Forward Voltage @ I F
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non ? repetitive
duty cycle
http://onsemi.com
2
Uni ? Directional TVS
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