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参数资料
| 型号： | SZSMF12CT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | TVS ARRAY 5LINE 100W 12V SC88 |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 12V |
| 电压 - 击穿： | 13.3V |
| 功率（瓦特）： | 100W |
| 电极标记： | 5 通道阵列 - 单向 |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G
SMF05CT1G ELECTRICAL CHARACTERISTICS (T J = 25 ? C unless otherwise specified)
Parameter
Reverse Working Voltage
Symbol
V RWM
(Note 2)
Conditions
Min
Typ
Max
5.0
Unit
V
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
V BR
I R
V C
V C
I PP
C J
I T = 1 mA, (Note 3)
V RWM = 5 V
I PP = 5 A (8 x 20 m s Waveform)
I PP = 8 A (8 x 20 m s Waveform)
8 x 20 m s Waveform
V R = 0 V, f = 1 MHz (Line to GND)
6.2
0.07
80
7.2
5.0
9.8
12.5
8.0
130
V
m A
V
V
A
pF
SMF12CT1G ELECTRICAL CHARACTERISTICS (T J = 25 ? C unless otherwise specified)
Parameter
Reverse Working Voltage
Symbol
V RWM
(Note 2)
Conditions
Min
Typ
Max
12
Unit
V
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
V BR
I R
V C
V C
I PP
C J
I T = 1 mA, (Note 3)
V RWM = 12 V
I PP = 3 A (8 x 20 m s Waveform)
I PP = 6 A (8 x 20 m s Waveform)
8 x 20 m s Waveform
V R = 0 V, f = 1 MHz (Line to GND)
13.3
0.01
40
15
0.1
21
23
6.0
60
V
m A
V
V
A
pF
SMF15CT1G ELECTRICAL CHARACTERISTICS (T J = 25 ? C, unless otherwise specified)
Parameter
Reverse Working Voltage
Symbol
V RWM
(Note 2)
Conditions
Min
Typ
Max
15
Unit
V
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
V BR
I R
V C
V C
I PP
C J
I T = 1 mA, (Note 3)
V RWM = 15 V
I PP = 1 A (8 x 20 m s Waveform)
I PP = 5 A (8 x 20 m s Waveform)
8 x 20 m s Waveform
V R = 0 V, f = 1 MHz (Line to GND)
17
0.01
33
19
1.0
23
29
5.0
45
V
m A
V
V
A
pF
SMF24CT1G ELECTRICAL CHARACTERISTICS (T J = 25 ? C, unless otherwise specified)
Parameter
Reverse Working Voltage
Symbol
V RWM
(Note 2)
Conditions
Min
Typ
Max
24
Unit
V
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
V BR
I R
V C
V C
I PP
C J
I T = 1 mA, (Note 3)
V RWM = 24 V
I PP = 1 A (8 x 20 m s Waveform)
I PP = 2.5 A (8 x 20 m s Waveform)
8 x 20 m s Waveform
V R = 0 V, f = 1 MHz (Line to GND)
26.7
0.01
21
32
1.0
40
44
2.5
25
V
m A
V
V
A
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V BR is measured at pulse test current I T .
4. Include SZ-prefix devices where applicable.
http://onsemi.com
2
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| SZSMF20AT1G | 功能描述:TVS ZENER 200W 20V SOD123FL RoHS:是 类别:过电压，电流，温度装置 >> TVS - 二极管 系列:- 标准包装:3,000 系列:- 电压 - 反向隔离（标准值）:4V 电压 - 击穿:5V 功率（瓦特）:429W 电极标记:单向 安装类型:表面贴装 封装/外壳:3-WDFN 供应商设备封装:LLP75-3B 包装:带卷 (TR) |
| SZSMF24AT1G | 功能描述:TVS 二极管 - 瞬态电压抑制器 SNB ZENER TVS FL RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SZSMF33AT1G | 功能描述:TVS 二极管 - 瞬态电压抑制器 ZENER TVS SOD123FL RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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