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参数资料
| 型号： | T2322B |
| 厂商： | Electronic Theatre Controls, Inc. |
| 元件分类： | 三端双向可控硅开关 |
| 英文描述： | 2.5-A SENSITIVE GATE SILICON TRIACS |
| 中文描述： | 2.5一个敏感栅硅双向可控硅 |
| 文件页数： | 2/4页 |
| 文件大小： | 79K |
| 代理商： | T2322B |
2
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
3.5
°
C/W
Thermal Resistance, Junction to Ambient
60
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25
°
C
TJ = 100
°
C
IDRM
—
—
—
0.2
10
0.75
μ
A
mA
Peak On-State Voltage*
(ITM = 10 A)
T2323 Series
T2322 Series
VTM
—
—
1.7
1.7
2.6
2.2
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 30
)
All Modes
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–); MT2(–),I G(+)
T2322 Series
T2323 Series
T2323 Series
IGT
—
—
—
—
—
—
10
25
40
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 30
, TC = 25
°
C)
(VD = VDRM, RL = 125
, TC = 100
°
C)
VGT
—
0.15
1
—
2.2
—
Volts
Holding Current
(VD = 12 V, ITM = 150 mA, Gate Open)
IH
—
15
30
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 10 A pk, IG = 60 mA)
tgt
—
1.8
2.5
μ
s
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 100
°
C)
dv/dt
10
100
—
V/
μ
s
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 3.5 A pk, Commutating
di/dt = 1.26 A/ms, Gate Unenergized, TC = 90
°
C)
300
μ
s, Duty Cycle
dv/dt(c)
1
4
—
V/
μ
s
*Pulse Test: Pulse Width
2%.
相关PDF资料 |
PDF描述 |
|---|---|
| T2322D | CONN., 26 POS LATCH HEADER |
| T2322E | 2.5-A SENSITIVE GATE SILICON TRIACS |
| T2322M | 2.5-A SENSITIVE GATE SILICON TRIACS |
| T2322N | 2.5-A SENSITIVE GATE SILICON TRIACS |
| T2323 | 2.5-A SENSITIVE GATE SILICON TRIACS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| T2322BG | 功能描述:双向可控硅 THY SPECIAL TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| T2322D | 制造商: 功能描述: 制造商:undefined 功能描述: |
| T2322E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2.5-A SENSITIVE GATE SILICON TRIACS |
| T2322M | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2.5-A SENSITIVE GATE SILICON TRIACS |
| T2322N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2.5-A SENSITIVE GATE SILICON TRIACS |
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