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参数资料
| 型号： | T2500BFP |
| 厂商： | MOTOROLA INC |
| 元件分类： | 晶闸管 |
| 英文描述： | ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS |
| 中文描述： | 200 V, 6 A, TRIAC |
| 文件页数： | 1/4页 |
| 文件大小： | 83K |
| 代理商： | T2500BFP |
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and
Stability
Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Repetitive Peak Off-State Voltage(1)
(TJ = –40 to +100
°
C, Gate Open)
T2500BFP
T2500DFP
T2500MFP
T2500NFP
VDRM
200
400
600
800
Volts
On-State RMS Current (TC = +80
°
C)(2)
(Full Cycle Sine Wave 50 to 60 Hz)
IT(RMS)
6
Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80
°
C)
ITSM
60
Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I2t
40
A2s
Peak Gate Power
(TC = +80
°
C, Pulse Width = 1
μ
s)
PGM
1
Watt
Average Gate Power
(TC = +80
°
C, t = 8.3 ms)
PG(AV)
0.2
Watt
Peak Gate Trigger Current (Pulse Width = 10
μ
s)
IGTM
VISO
TJ
Tstg
4
Amps
RMS Isolation Voltage (TA = 25
°
C, Relative Humidity
Operating Junction Temperature Range
20%)
1500
Volts
–40 to +100
°
C
Storage Temperature Range
–40 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case(2)
Case to Sink
Junction to Ambient
R
θ
JC
R
θ
CS
R
θ
JA
2.7
2.2(typ)
60
°
C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Order this document
by T2500FP/D
SEMICONDUCTOR TECHNICAL DATA
CASE 221C-02
STYLE 3
ISOLATED TRIACs
THYRISTORS
6 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
相关PDF资料 |
PDF描述 |
|---|---|
| T2500FP | SPST to 4PST Slide DIP Switches |
| T2500MFP | SPST to 4PST Slide DIP Switches |
| T2500NFP | ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS |
| T2500D | Silicon Bidirectional Thyristors |
| T2700 | SPLICE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| T2500D | 功能描述:双向可控硅 THY SPECIAL TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| T2500DFP | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| T2500DG | 功能描述:双向可控硅 THY SPECIAL TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| T2500FP | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS |
| T2500M | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRIAC|600V V(DRM)|6A I(T)RMS|TO-220 |
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