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参数资料
| 型号： | T2535-800G-TR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 晶闸管 |
| 英文描述： | 800 V, 25 A, SNUBBERLESS TRIAC |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 5/12页 |
| 文件大小： | 136K |
| 代理商： | T2535-800G-TR |
Characteristics
BTA24, BTB24, BTA25, BTA26, BTB26, T25
2/12
1
Characteristics
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (full sine wave)
TOP3
Tc = 105° C
25
A
D2PAK /
TO-220AB
Tc = 100° C
RD91 Ins/
TOP3 Ins.
Tc = 100° C
TO-220AB Ins.
Tc = 75° C
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25° C)
F = 50 Hz
t = 20 ms
250
A
F = 60 Hz
t = 16.7 ms
260
ItIt Value for fusing
tp = 10 ms
340
As
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
Tj = 125° C
50
A/s
VDSM/VRSM
Non repetitive surge peak off-state
voltage
tp = 10 ms
Tj = 25° C
VDRM/VRRM
+ 100
V
IGM
Peak gate current
tp = 20 s
Tj = 125° C
4
A
PG(AV)
Average gate power dissipation
Tj = 125° C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
° C
Table 3.
Electrical characteristics (Tj = 25° C, unless otherwise specified), Snubberless and
logic level (3 quadrants) T25, BTA/BTB24...W, BTA25...W, BTA26...W
Symbol
Test Conditions
Quadrant
T25
BTA/BTB
Unit
T2535
CW
BW
IGT
(1)
VD = 12 V RL = 33 Ω
I - II - III
MAX.
35
50
mA
VGT
I - II - III
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 kΩ
Tj = 125° C
I - II - III
MIN.
0.2
V
IH
(2)
IT = 500 mA
MAX.
50
75
mA
IL
IG = 1.2 IGT
I - III
MAX.
70
80
mA
II
80
100
dV/dt (2)
VD = 67 %VDRM gate open
Tj = 125° C
MIN.
500
1000
V/s
(dI/dt)c (2)
Without snubber
Tj = 125° C
MIN.
13
22
A/ms
1.
minimum IGT is guaranted at 5% of IGT max.
2.
for both polarities of A2 referenced to A1.
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相关代理商/技术参数 |
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