参数资料
型号: T2535-800G
厂商: STMICROELECTRONICS
元件分类: 晶闸管
英文描述: 800 V, 25 A, SNUBBERLESS TRIAC
封装: ROHS COMPLIANT, PLASTIC, D2PAK-3
文件页数: 6/12页
文件大小: 136K
代理商: T2535-800G
BTA24, BTB24, BTA25, BTA26, BTB26, T25
Characteristics
3/12
Table 4.
Electrical characteristics (Tj = 25° C, unless otherwise specified),
standard (4 quadrants), BTB24...B, BTA25...B, BTA26...B, BTB26...B
Symbol
Test Conditions
Quadrant
Value
Unit
IGT
(1)
VD = 12 V
RL = 33 Ω
I - II - III
MAX.
50
mA
IV
100
VGT
ALL
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 kΩ Tj = 125° C
ALL
MIN.
0.2
V
IH
(2))I
T = 500 mA
MAX.
80
mA
IL
IG = 1.2 IGT
I - III - IV
MAX.
70
mA
II
160
VD = 67 %VDRM gate open
Tj = 125° C
MIN.
500
V/s
(dV/dt)c (2)
(dI/dt)c = 13.3 A/ms
Tj = 125° C
MIN.
10
V/s
1.
minimum IGT is guaranted at 5% of IGT max.
2.
for both polarities of A2 referenced to A1.
Table 5.
Static characteristics
Symbol
Test Conditions
Value
Unit
VTM
(1)
ITM = 35 A
tp = 380 s
Tj = 25° C
MAX.
1.55
V
Vt0
Threshold voltage
Tj = 125° C
MAX.
0.85
V
Rd
Dynamic resistance
Tj = 125° C
MAX.
16
m
Ω
IDRM
IRRM
VDRM = VRRM
Tj = 25° C
MAX.
5A
Tj = 125° C
3
mA
1.
for both polarities of A2 referenced to A1.
Table 6.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
TOP 3
0.6
° C/W
D2PAK / TO-220AB
0.8
RD91 Insulated / TOP3 Insulated
0.9
TO-220AB Insulated
1.7
Rth(j-a)
Junction to ambient
(1)S = 1 cm
D2PAK
45
° C/W
TOP3 / TOP3 Insulated
50
TO-220AB / TO-220AB Insulated
60
1.
S = Copper surface under tab.
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