参数资料
型号: T436416D-7C
厂商: TM Technology, Inc.
英文描述: 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
中文描述: 4米× 16 SDRAM的100万x 16Bit的X 4Banks同步DRAM
文件页数: 23/73页
文件大小: 734K
代理商: T436416D-7C
TE
CH
tm
Figure 4. Power on Sequence and Auto Refresh (CBR)
T436416D
TM Technology Inc. reserves the right
P. 23
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
A0-A9,A11
DQM
DQ
t
CK2
High level
is reauired
Minimum of 2 Refresh Cycles are required
Hi-Z
t
RP
t
RC
Address Key
Inputs must be
stable for 200
μ
s
PCommand
1stCommand
2ndCommand
Mode Register
CoAny
相关PDF资料
PDF描述
T436416D-7CG 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-7S 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
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相关代理商/技术参数
参数描述
T436416D-7CG 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-7S 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-7SG 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436432B 制造商:TMT 制造商全称:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
T436432B-10S 制造商:TMT 制造商全称:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM