参数资料
型号: T436432B-55SG
厂商: TM Technology, Inc.
英文描述: 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
中文描述: 200万× 32内存为512k × 32 x 4Banks同步DRAM
文件页数: 59/72页
文件大小: 731K
代理商: T436432B-55SG
TE
CH
tm
T436432B
TM Technology Inc. reserves the right
P. 59
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
Figure 18.1. Full Page Read Cycle (Burst Length=Full Page, CAS# Latency=1)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
A10
A0~A9
DQM
DQ
BS0,1
Activate
Command
Bank A
Ax
Ax+1 Bx
Bx+1
Bx+3 Bx+4
Hi-Z
Read
Command
Bank A
RAx
RAx
RBx
Ax+1 Ax+2Ax-2 Ax-1
Bx+2
Bx+5
Activate
Command
Bank B
Burst Stop
Command
CBx
High
Read
Command
Bank B
Precharge
Command
Bank B
CAx
RBx
RBy
RBy
Ax
Bx+6 Bx+7
The burst counter wraps
from the highest order
page address back to zero
during this time interval
Full Page burst operation does not
terminate when the burst length is satisfied;
the burst counter increments and continues
bursting beginning with the starting address.
Activate
Command
Bank B
t
CK1
t
RRD
t
RP
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