参数资料
型号: T835-800B-TR
厂商: STMICROELECTRONICS
元件分类: 晶闸管
英文描述: 800 V, 8 A, SNUBBERLESS TRIAC
封装: DPAK-3
文件页数: 6/12页
文件大小: 145K
代理商: T835-800B-TR
BTA08, BTB08 and T8 Series
Characteristics
Doc ID 7472 Rev 7
3/12
S = Copper surface under tab.
Table 3.
Standard (4 quadrants)
Symbol
Test conditions
Quadrant
BTA08 / BTB08
Unit
CB
IGT
VD = 12 V, RL = 33 Ω
I - II - III
IV
MAX.
25
50
100
mA
VGT
ALL
MAX.
1.3
V
VGD
VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C
ALL
MIN.
0.2
V
IH
IT = 500 mA
MAX.
25
50
mA
IL
IG = 1.2 IGT
I - III - IV
MAX.
40
50
mA
II
80
100
dV/dt (2) VD = 67 %VDRM gate open
Tj = 125 °C
MIN.
200
400
V/s
(dV/dt)c
(dI/dt)c = 5.3 A/ms
Tj = 125 °C
MIN.
5
10
V/s
Table 4.
Static characteristics
Symbol
Test conditions
Value
Unit
VTM
(1)
ITM = 11 A, tp = 380 s
Tj = 25 °C
MAX.
1.55
V
Vt0
(2)
Threshold voltage
Tj = 125 °C
MAX.
0.85
V
Rd
Dynamic resistance
Tj = 125 °C
MAX.
50
m
Ω
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C
MAX.
5A
Tj = 125 °C
1
mA
1.
minimum IGT is guaranted at 5% of IGT max.
2.
for both polarities of A2 referenced to A1.
Table 5.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
IPAK / D2PAK / DPAK / TO-220AB
1.6
°C/W
TO-220AB Insulated
2.5
Rth(j-a)
Junction to ambient
S = 1 cm
D2PAK
45
°C/W
S = 0.5 cm
DPAK
70
TO-220AB / TO-220AB Insulated
60
IPAK
100
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