- 您现在的位置：买卖IC网 > PDF目录299950 > T835-800B (STMICROELECTRONICS) 800 V, 8 A, SNUBBERLESS TRIAC PDF资料下载
参数资料
| 型号： | T835-800B |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 晶闸管 |
| 英文描述： | 800 V, 8 A, SNUBBERLESS TRIAC |
| 封装： | DPAK-3 |
| 文件页数： | 8/12页 |
| 文件大小： | 145K |
| 代理商： | T835-800B |
BTA08, BTB08 and T8 Series
Characteristics
Doc ID 7472 Rev 7
5/12
Figure 7.
Non-repetitive surge peak on-state
current for a sinusoidal
Figure 8.
Relative variation of gate trigger
current
0.01
0.10
1.00
10.00
10
100
1000
I
(A), I t (A s)
TSM
22
t (ms)
p
T initial=25°C
j
ITSM
dI/dt limitation:
50A/s
I t
2
pulse with width t < 10 ms and corresponding value of I t
p
2
360°
α
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
T (°C)
j
I,I ,I [T ] /
GTHL
j
I
,I ,I [T =25°C]
GTHL
j
IGT
IH & IL
holding current and latching current
versus junction temperature (typical values)
Figure 9.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
Figure 10.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
(dV/dt)c (V/s)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
TW
T835/CW/BW
T810/SW
Snubberless and Logic level types
0.1
1.0
10.0
100.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
(dV/dt)c (V/s)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
C
B
Standard types
Figure 11.
Relative variation of critical rate of
decrease of main current versus
junction temperature
Figure 12.
DPAK and D2PAK thermal resistance
junction to ambient versus copper
surface under tab
0
25
50
75
100
125
0
1
2
3
4
5
6
(dI/dt)c [T ] /
pecified]
j
(dI/dt)c [T s
j
T (°C)
j
0
4
8
1216202428323640
0
10
20
30
40
50
60
70
80
90
100
S(cm)
R
(°C/W)
th(j-a)
DPAK
2
DPAK
printed circuit board FR4, copper thickness: 35 m
相关PDF资料 |
PDF描述 |
|---|---|
| T835-800G-TR | 800 V, 8 A, SNUBBERLESS TRIAC |
| T835-800G | 800 V, 8 A, SNUBBERLESS TRIAC |
| T835-800H | 800 V, 8 A, SNUBBERLESS TRIAC |
| T83C5101ZZZ-3ZSIL | 8-BIT, MROM, 40 MHz, MICROCONTROLLER, PDIP24 |
| T86N10BOF | 200 A, 1000 V, SCR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| T835-800B-TR | 功能描述:双向可控硅 8A 双向可控硅 RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| T835-800G | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8A TRIACS |
| T835-800G-TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8A TRIACS |
| T835-800H | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Snubberless?, logic level and standard 8 A Triacs |
| T835-800H-TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Snubberless?, logic level and standard 8 A Triacs |
发布紧急采购，3分钟左右您将得到回复。