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参数资料
| 型号： | T85HFL80S10 |
| 厂商： | International Rectifier |
| 英文描述： | FAST RECOVERY DIODES |
| 中文描述： | 快速恢复二极管 |
| 文件页数： | 9/13页 |
| 文件大小： | 219K |
| 代理商： | T85HFL80S10 |
T..HFL Series
9
Bulletin I27107 rev. A 09/97
www.irf.com
Fig. 28 - Recovery Time Characteristics
Fig. 29 - Recovery Charge Characteristics
Fig. 30 - Recovery Current Characteristics
Fig. 31 - Recovery Time Characteristics
Fig. 32 - Recovery Charge Characteristics
Fig. 33 - Recovery Current Characteristics
Fig. 34 - Recovery Time Characteristics
Fig. 35 - Recovery Charge Characteristics
Fig. 36 - Recovery Current Characteristics
6
8
10
12
14
16
18
20
22
24
26
28
10 20 30 40 50 60 70 80 90 100
200A
100A
50A
M
Rate Of Fall Of Forwa rd C urrent - di/dt (A/
μs)
T85HFL..S02
T = 125
°C
I = 300A
5
10
15
20
25
10 20 30 40 50 60 70 80 90 100
200A
100A
50A
M
μ
Ra te Of Fall Of Forward C urrent - di/dt (A/
μs)
T85HFL..S02
T = 125
°C
I = 300A
0.6
0.7
0.8
0.9
1
1.1
1.2
10
100
100A
50A
200A
M
μ
Rate Of Fall Of Forwa rd C urrent - di/dt (A/
μs)
T85HFL..S02
T = 125
°C
FM
10
15
20
25
30
35
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
M
Rate Of Fall O f Forward C urrent - di/dt (A/
μs)
T85HFL..S05
T = 125
°C
I = 300A
6
9
12
15
18
21
24
27
30
10 20 30 40 50 60 70 80 90 100
200A
M
μ
Rate Of Fall Of Forward C urrent - di/dt (A/
μs)
T85HFL..S05
T = 125
°C
100A
50A
I = 300A
0.8
0.9
1
1.1
1.2
1.3
10
100
100A
50A
200A
M
μ
Rate Of Fall Of Forward C urrent - di/dt (A/
μs)
I = 300A
T85HFL..S05
T = 125
°C
15
20
25
30
35
40
45
50
55
60
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
M
I = 300A
T85HFL..S10
T = 125
°C
Rate Of Fall Of Forward C urrent - di/dt (A/
μs)
10
15
20
25
30
35
40
45
50
55
10 20 30 40 50 60 70 80 90 100
200A
M
μ
Ra te Of Fall Of Forward C urrent - di/dt (A/
μs)
100A
50A
T85HFL..S10
T = 125
°C
I = 300A
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
10
100
100A
50A
200A
M
μ
Rate Of Fall Of Forward C urrent - di/dt (A/
μs)
T85HFL..S10
T = 125
°C
I = 300A
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