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参数资料
| 型号： | T930S20TOC |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 晶闸管 |
| 英文描述： | 2130 A, 2000 V, SCR |
| 文件页数： | 1/6页 |
| 文件大小： | 215K |
| 代理商： | T930S20TOC |
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T930S
IFBIP D AEC/ 2008-09-15, H.Sandmann
A 46/08
1/6
Seite/page
enndaten
Elektrische Eigenschaften
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Vorwrts- und Rückwrts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Tvj = -40°C... Tvj max
VDRM,VRRM
1600
1800
2000
V
Vorwrts-Stossspitzensperrspannung
non-repetitive peak forward off-state voltage
Tvj = -40°C... Tvj max
VDSM
1600
1800
2000
V
Rückwrts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
Tvj = +25°C... Tvj max
VRSM
1700
1900
2100
V
Durchlassstrom-Grenzeffektivwert
maximum RMS on-state current
ITRMSM
2000 A
Dauergrenzstrom
average on-state current
TC = 85
ITAVM
930 A
Dauergrenzstrom
average on-state current
TC = 55 °C, θ = 180°sin, tP = 10 ms
ITAVM
1360 A
Durchlastrom-Effektivwert
RMS on-state current
ITRMS
2130 A
Stossstrom-Grenzwert
surge current
Tvj = 25 °C °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
ITSM
20500
18000
A
Grenzlastintegral
It-value
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
It
2100
1620
10 As
Kritische Stromsteilheit
critical rate of rise of on-state current
DIN IEC 60747-6
vD ≤ 67%VDRM, f = 50 Hz,
iGM = 1,2 A, diG/dt = 1,2 A/s
(diT/dt)cr
250 A/s
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Tvj = Tvj max, vD = 0,67 VDRM
5.Kennbuchstabe / 5
th letter
(dvD/dt)cr
B:
C:
50
500
V/s
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
Tvj = Tvj max, iT = 3500A
vT
max.
2,7 V
Schleusenspannung
threshold voltage
Tvj = Tvj max
V(TO)
1,35 V
Ersatzwiderstand
slope resistance
Tvj = Tvj max
rT
0,33 m
Durchlasskennlinie
250A ≤ iT ≤ 4500 A
on-state characteristic
T
i
D
1)
i
(
ln
C
i
B
A
v
+
+
+
=
Tvj = Tvj max
A=
B=
C=
D=
1,613E+00
1,744E-04
-7,502E-02
1,780E-02
Zündstrom
gate trigger current
Tvj = 25 °C, vD = 12V
IGT
max.
250 mA
Zündspannung
gate trigger voltage
Tvj = 25 °C, vD = 12V
VGT
max.
2,2 V
Nicht zündender Steuerstrom
gate non-trigger current
Tvj = Tvj max, vD = 12V
Tvj = Tvj max, vD = 0,5 VDRM
IGD
max.
10
5
mA
Nicht zündende Steuerspannung
gate non-trigger voltage
Tvj = Tvj max, vD = 0,5 VDRM
VGD
max.
0,25 V
Haltestrom
holding current
Tvj = 25°C, vD = 12V
IH
max.
300 mA
Einraststrom
latching current
Tvj = 25°C, vD = 12V, RGK ≥ 10
iGM = 1,2 A, diG/dt = 1,2 A/s,
tg = 20 s
IL
max.
1500 mA
1)
Werte nach DIN IED 747-6 (ohne vorausgehende Kommutierung) / values to DIN IEC 747-6 (without prior commutation)
prepared by: H.Sandmann
date of publication:
2008-09-15
approved by: M.Leifeld
revision:
3.0
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