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参数资料
| 型号： | TA76L431SQ |
| 元件分类： | 基准电压源/电流源 |
| 英文描述： | TWO TERM VOLTAGE REFERENCE, PSIP3 |
| 封装： | 1.27 MM PITCH, ROHS COMPLIANT, PLASTIC, TO-92MOD, SSIP-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 241K |
| 代理商： | TA76L431SQ |
TA76L431FT/S
2009-09-30
3
Typical Application Circuits
(1) 2.49 V Reference (VKA = VREF)
(2) Shunt regulator (VKA > VREF)
Precautions during Use
1. TA76L431FT, TA76L431S
These products contain MOS elements. Please take care to avoid generating static electricity when handling
these devices.
2. TA76L431FT, TA76L431S
The oscillation frequency of these devices is determined by the value of the capacitor connected between the
anode and the cathode.
When establishing maximum operating condition parameters, please derate the maximum rating values
specified in these datasheets so as to allow an operational safety margin.
Use of a laminated ceramic capacitor is recommended
3. Precautions when handling anode pin of TA76L431FT
Pin 2 and pin 5 should normally be shorted together. If only pin 5 is used, pin 2 should either be left open or
always kept at a lower potential than pin 5. Do not leave pin 5 open and use pin 2 only.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Cathode voltage
VKA
20
V
Cathode current
IK
50
mA
Cathode-anode reverse current
IK
50
mA
Reference voltage
VREF
7
V
Reference current
IREF
50
μA
Reference-anode reverse current
IREF
10
mA
TA76L431FT
0.45 (Note 1)
Power dissipation
TA76L431S
PD
0.8
W
TA76L431FT
277 (Note 1)
Thermal
resistance
TA76L431S
Rth
156
C/W
Operating temperature
Topr
4085
C
Junction temperature
Tj
150
C
Storage temperature
Tstg
55150
C
Note 1: Glass epoxy substrate mounting: 30 mm
× 30 mm × 0.8 mmt (Cu pad area 35 mm
2
)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
VOUT = 2.49 V
VIN
VOUT
R1
I
R
1
V
REF
2
1
REF
+
+
=
VOUT
R1
R2
VREF
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