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| 型号： | TAS5111ADADR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 93 W, 1 CHANNEL, AUDIO AMPLIFIER, PDSO32 |
| 封装： | GREEN, PLASTIC, HTSSOP-32 |
| 文件页数： | 2/19页 |
| 文件大小： | 447K |
| 代理商： | TAS5111ADADR |
TAS5111A
SLES111 AUGUST 2005
www.ti.com
10
THEORY OF OPERATION
POWER SUPPLIES
The power device only requires two supply voltages,
GVDD and PVDD_X.
GVDD is the gate drive supply for the device, regulated
internally down to approximately 12 V, and decoupled with
regards to board GND on the GREG pins through an
external capacitor. GREG powers both the low side and
high side via a bootstrap step-up conversion. The
bootstrap supply is charged after the first low-side turnon
pulse. Internal digital core voltage DREG is also derived
from GVDD and regulated down by internal LDRs to 3.3 V.
The gate-driver LDR can be bypassed for reducing idle
loss in the device by shorting GREG to GVDD and directly
feeding in 12 V. This can be useful in an application where
thermal conduction of heat from the device is difficult.
Bypassing the LDR reduces dissipation by approximately
1 W at 30-V GVDD input.
PVDD_X is the H-bridge power supply pin. Two power
pins exist for each half-bridge to handle the current density.
It is important that the circuitry recommendations around
the PVDD_X pins are followed carefully both topology-
and layout-wise. For topology recommendations, see the
Typical
System
Configuration
section.
For
layout
recommendations, see the reference design layout for the
TAS5111A.
Following
these
recommendations
is
important for parameters like EMI, reliability, and
performance.
POWERING UP
RESET
GVDD
PVDD_x
PWM_xP
> 1 ms
NOTE: PVDD should not be powered up before GVDD.
During power up when RESET is asserted LOW, all
MOSFETs are turned off and the two internal half-bridges
are in the high-impedance state (Hi-Z). The bootstrap
capacitors supplying the high-side gate drive are not
charged at this point. To comply with the click and pop
scheme and use of non-TI TDAA modulators, it is
recommended to use a 4-k
pulldown resistor on each
PWM output node to ground. This precharges the
bootstrap supply capacitors and discharges the output
filter capacitor (see the Typical TAS5111A Application
Configuration section).
After GVDD has been applied, it takes approximately 800
s to fully charge the BST capacitor. Within this time,
RESET must be kept low. After approximately 1 ms, the
back-end bootstrap capacitor is charged.
RESET can now be released if the modulator is powered
up and streaming valid PWM signals to the back-end
PWM_xP. Valid means a switching PWM signal which
complies with the frequency and duty cycle ranges stated
in the Recommended Operating Conditions.
A constant HIGH dc level on the PWM_xP is not permitted,
because it would force the high-side MOSFET ON until it
eventually runs out of BST capacitor energy and might
damage the device.
An unknown state of the PWM output signals from the
modulator is not permitted, which in practice means that
the PWM processor must be powered up and initialized
before RESET is de-asserted HIGH to the back end.
POWERING DOWN
For power down of the back end, an opposite approach is
necessary. The RESET must be asserted LOW before the
valid PWM signal is removed.
When TI TDAA modulators are used with TI TDAA back
ends, the correct timing control of RESET and PWM_xP
is performed by the modulator.
PRECAUTION
The
TAS5111A
must
always
start
up
in
the
high-impedance (Hi-Z) state. In this state, the bootstrap
(BST) capacitor is precharged by a resistor on each PWM
output node to ground. See the system configuration. This
ensures that the back end is ready for receiving PWM
pulses, indicating either HIGH- or LOW-side turnon after
RESET is de-asserted to the back end.
With the following pulldown resistor and BST capacitor
size, the charge time is:
C = 33 nF, R = 4.7 k
R
× C × 5 = 775.5 s
After GVDD has been applied, it takes approximately 800
s to fully charge the BST capacitor. During this time,
RESET must be kept low. After approximately 1 ms, the
back-end BST is charged and ready. RESET can now be
released if the PWM modulator is ready and is streaming
valid PWM signals to the back end. Valid PWM signals are
switching PWM signals with a frequency between
350400 kHz. A constant HIGH level on the PWM+ would
force the high-side MOSFET ON until it eventually ran out
of BST capacitor energy. Putting the device in this
condition should be avoided.
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相关代理商/技术参数 |
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| TAS5111ADADRG4 | 功能描述:音频放大器 Digital Amp Power Stage RoHS:否 制造商:STMicroelectronics 产品:General Purpose Audio Amplifiers 输出类型:Digital 输出功率: THD + 噪声: 工作电源电压:3.3 V 电源电流: 最大功率耗散: 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:TQFP-64 封装:Reel |
| TAS5111DAD | 功能描述:音频放大器 Dig Amp Power Stage RoHS:否 制造商:STMicroelectronics 产品:General Purpose Audio Amplifiers 输出类型:Digital 输出功率: THD + 噪声: 工作电源电压:3.3 V 电源电流: 最大功率耗散: 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:TQFP-64 封装:Reel |
| TAS5111DADG4 | 功能描述:音频放大器 Dig Amp Power Stage RoHS:否 制造商:STMicroelectronics 产品:General Purpose Audio Amplifiers 输出类型:Digital 输出功率: THD + 噪声: 工作电源电压:3.3 V 电源电流: 最大功率耗散: 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:TQFP-64 封装:Reel |
| TAS5111DADR | 功能描述:音频放大器 Dig Amp Power Stage RoHS:否 制造商:STMicroelectronics 产品:General Purpose Audio Amplifiers 输出类型:Digital 输出功率: THD + 噪声: 工作电源电压:3.3 V 电源电流: 最大功率耗散: 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:TQFP-64 封装:Reel |
| TAS5111DADRG4 | 功能描述:音频放大器 Dig Amp Power Stage RoHS:否 制造商:STMicroelectronics 产品:General Purpose Audio Amplifiers 输出类型:Digital 输出功率: THD + 噪声: 工作电源电压:3.3 V 电源电流: 最大功率耗散: 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:TQFP-64 封装:Reel |
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