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参数资料
| 型号： | TAS5152DKDRG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 240 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO36 |
| 封装： | GREEN, PLASTIC, HSSOP-36 |
| 文件页数： | 12/29页 |
| 文件大小： | 681K |
| 代理商： | TAS5152DKDRG4 |
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TAS5152
SLES127A FEBRUARY 2005 REVISED NOVEMBER 2005
www.ti.com
2
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
GENERAL INFORMATION
The TAS5152 is available in a 36-pin PSOP3 (DKD)
thermally enhanced package. The package contains a
heat slug that is located on the top side of the device for
convenient thermal coupling to the heatsink.
1
2
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9
10
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36
35
34
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32
31
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29
28
27
26
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24
23
22
21
20
19
GVDD_B
OTW
SD
PWM_A
RESET_AB
PWM_B
OC_ADJ
GND
AGND
VREG
M3
M2
M1
PWM_C
RESET_CD
PWM_D
VDD
GVDD_C
GVDD_A
BST_A
PVDD_A
OUT_A
GND_A
GND_B
OUT_B
PVDD_B
BST_B
BST_C
PVDD_C
OUT_C
GND_C
GND_D
OUT_D
PVDD_D
BST_D
GVDD_D
DKD PACKAGE
(TOP VIEW)
MODE Selection Pins
MODE PINS
PWM INPUT
OUTPUT
CONFIGU-
PROTECTION
SCHEME
M3
M2
M1
CONFIGU-
RATION
SCHEME
0
2N (1) AD/BD
modulation
2 channels
BTL output
BTL mode (2)
0
1
Reserved
0
1
0
1N (1) AD
modulation
2 channels
BTL output
BTL mode (2)
0
1
1N (1) AD
modulation
1 channel
PBTL output
PBTL mode.
Only PWM_A
input is used.
1
0
1N (1) AD
modulation
4 channels
SE output
Protection works
similarly to BTL
mode (2). Only
difference in SE
mode is that
OUT_x is Hi-Z
instead of a
pulldown through
internal pulldown
resistor.
1
0
1
0
Reserved
1
Reserved
(1) The 1N and 2N naming convention is used to indicate the required
number of PWM lines to the power stage per channel in a specific
mode.
(2) An overload protection (OLP) occurring on A or B causes both
channels to shut down. An OLP on C or D works similarly. Global
errors like overtemperature error (OTE), undervoltage protection
(UVP) and power-on reset (POR) affect all channels.
Package Heat Dissipation Ratings (1)
PARAMETER
TAS5152DKD
RθJC (°C/W)—2 BTL or 4 SE
channels (8 transistors)
1.28
RθJC °C/W)—1 BTL or 2 SE
channel(s) (4 transistors)
2.56
RθJC (°C/W)—(1 transistor)
8.6
Pad area (2)
80 mm2
(1) JC is junction-to-case, CH is case-to-heatsink.
(2) RθCH is an important consideration. Assume a 2-mil thickness of
typical thermal grease between the pad area and the heatsink. The
RθCH with this condition is 0.8°C/W for the DKD package and
1.8
°C/W for the DDV package.
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