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参数资料
| 型号： | TB2300H |
| 厂商： | Diodes Inc. |
| 英文描述： | 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| 中文描述： | 100号A的双向表面贴装晶闸管浪涌保护器 |
| 文件页数： | 2/4页 |
| 文件大小： | 184K |
| 代理商： | TB2300H |
DS30360 Rev. 3 - 2
2 of 4
TB0640H - TB3500H
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Part Number
Rated
Repetitive
Off-State
Voltage
Off-State
Leakage
Current @
V
DRM
Breakover
Voltage
On-State
Voltage
@ I
T
= 1A
Breakover
Current
I
BO
Holding Current
I
H
Off-State
Capacitance
Marking
Code
V
DRM
(V)
I
DRM
(uA)
V
BO
(V)
V
T
(V)
Min
(mA)
50
50
50
50
50
50
50
50
50
50
50
Max (mA)
Min
(mA)
150
150
150
150
150
150
150
150
150
150
150
Max (mA)
C
O
(pF)
TB0640H
TB0720H
TB0900H
TB1100H
TB1300H
TB1500H
TB1800H
TB2300H
TB2600H
TB3100H
TB3500H
58
65
75
90
120
140
160
190
220
275
320
5
5
5
5
5
5
5
5
5
5
5
77
88
98
130
160
180
220
265
300
350
400
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
200
200
200
120
120
120
120
80
80
80
80
T064H
T072H
T090H
T110H
T130H
T150H
T180H
T230H
T260H
T310H
T350H
Symbol
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
C
O
Parameter
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current NOTE: 1
On state voltage
Peak pulse current
Off-state capacitance NOTE: 2
Notes:
recovery time does not exceed 30ms.
2. Off-state capacitance measured at f = 1.0MHz, 1.0V
RMS
signal, V
R
= 2V
DC
bias.
1. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
I
BO
V
BR
V
DRM
V
T
V
BO
I
H
I
V
I
BR
I
DRM
I
PP
C
U
D
O
R
P
W
E
N
相关PDF资料 |
PDF描述 |
|---|---|
| TB2300H-13 | 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| TB2300L | Connector Dust Cap; For Use With:MIL-C-38999 Series I Circular Connector Flanged Receptacles; Accessory Type:Protective Cap; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No |
| TB2300L-13 | 30A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| TB3100H | 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| TB3100H-13 | Circular Connector; Body Material:Aluminum Alloy; Series:MS3116; No. of Contacts:8; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:16-8 RoHS Compliant: No |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TB2300H-13 | 功能描述:硅对称二端开关元件 190V 100A RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TB2300H-13-F | 功能描述:硅对称二端开关元件 190V 100A RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TB2300L | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| TB2300L-13 | 功能描述:硅对称二端开关元件 30A 190V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TB2300L-13-F | 功能描述:硅对称二端开关元件 30A 190V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
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