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参数资料
| 型号： | TC1015 |
| 厂商： | Microchip Technology Inc. |
| 英文描述： | 50mA, 100mA and 150mA CMOS LDOs with Shutdown and Reference Bypass |
| 中文描述： | 为50mA，100mA的电流为150mA的CMOS低压降稳压器具有关断和参考旁路 |
| 文件页数： | 3/20页 |
| 文件大小： | 558K |
| 代理商： | TC1015 |
2002 Microchip Technology Inc.
DS21335B-page 3
TC1014/TC1015/TC1185
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage......................................................... 6.5V
Output Voltage...........................(-0.3V) to (V
IN
+ 0.3V)
Power Dissipation............... Internally Limited
(Note 7)
Maximum Voltage on Any Pin .........V
IN
+0.3V to -0.3V
Operating Temperature Range......-40°C < T
J
< 125°C
Storage Temperature......................... -65°C to +150°C
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
V
IN
= V
R
+ 1V, I
L
= 100
μ
A, C
L
= 3.3
μ
F, SHDN > V
IH
, T
A
= 25°C, unless otherwise noted.
Boldface
type
specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Device
Test Conditions
V
IN
I
OUT
MAX
Input Operating Voltage
Maximum Output Current
2.7
50
100
150
—
—
—
—
6.0
—
—
—
V
Note 1
mA
TC1014
TC1015
TC1185
V
OUT
TCV
OUT
Output Voltage
V
OUT
Temperature Coefficient
V
R
– 2.5%
—
—
—
V
R
±0.5%
V
R
+ 2.5%
20
40
0.05
V
Note 2
Note 3
—
—
ppm/°C
V
OUT
/
V
IN
V
OUT
/V
OUT
Load Regulation
Line Regulation
0.35
%
(V
R
+ 1V)
≤
V
IN
≤
6V
I
L
= 0.1mA to I
OUT
MAX
I
L
= 0.1mA to I
OUT
MAX
(Note 4)
I
L
= 100
μ
A
I
L
= 20mA
I
L
= 50mA
I
L
= 100mA
I
L
= 150mA
(Note 5)
SHDN = V
IH
, I
L
= 0
SHDN = 0V
F
RE
≤
1kHz
—
—
0.5
0.5
2
3
%
TC1014; TC1015
TC1185
V
IN
-V
OUT
Dropout Voltage
—
—
—
—
—
—
2
65
85
180
270
50
—
—
120
250
400
80
mV
TC1015; TC1185
TC1185
I
IN
I
INSD
PSRR
Supply Current (Note 8)
μ
A
μ
A
dB
Shutdown Supply Current
Power Supply Rejection
Ratio
Output Short Circuit Current
—
—
0.05
64
0.5
—
I
OUT
SC
V
OUT
/
P
D
T
SD
—
300
450
mA
V
OUT
= 0V
Notes 6, 7
Thermal Regulation
Thermal Shutdown Die
Temperature
Thermal Shutdown
Hysteresis
Output Noise
—
—
0.04
160
—
—
V/W
°C
T
SD
—
10
—
°C
eN
—
600
—
nV/
√
Hz
I
L
= I
OUT
MAX
, F = 10kHz
470pF from Bypass
to GND
Note
1:
2:
3:
The minimum V
has to meet two conditions: V
≥
2.7V and V
≥
V
+ V
.
V
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
)x 10
6
V
OUT
x
T
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
at V
= 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
, T
,
θ
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
Apply for Junction Temperatures of -40°C to +85°C.
5:
6:
7:
8:
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