参数资料
型号: TC1055-2.85VCT
厂商: Microchip Technology Inc.
元件分类: 基准电压源/电流源
英文描述: 50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output
中文描述: 为50mA,100mA的电流为150mA的CMOS关机和错误LDO的输出
文件页数: 3/18页
文件大小: 501K
代理商: TC1055-2.85VCT
2002 Microchip Technology Inc.
DS21350B-page 3
TC1054/TC1055/TC1186
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage......................................................... 6.5V
Output Voltage...........................(-0.3V) to (V
IN
+ 0.3V)
Power Dissipation............... Internally Limited
(Note 6)
Maximum Voltage on Any Pin ........ V
IN
+0.3V to -0.3V
Operating Temperature Range......-40°C < T
J
< 125°C
Storage Temperature......................... -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1054/TC1055/TC1186 ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
V
IN
= V
OUT
+ 1V, I
L
= 100
μ
A, C
L
= 3.3
μ
F, SHDN > V
IH
, T
A
= 25°C, unless otherwise noted.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
V
IN
I
OUT
MAX
Input Operating Voltage
Maximum Output Current
2.7
50
100
150
6.0
V
Note 8
TC1054
TC1055
TC1186
Note 1
Note 2
mA
V
OUT
TCV
OUT
Output Voltage
V
OUT
Temperature Coefficient
V
R
–2.5%
V
R
±0.5%
20
40
0.05
0.5
0.5
V
R
+ 2.5%
0.35
2
3
V
ppm/°C
V
OUT
/
V
IN
V
OUT
/V
OUT
Line Regulation
Load Regulation
%
%
(V
R
+ 1V)
V
IN
6V
I
L
= 0.1mA to I
OUT
MAX
I
L
= 0.1mA to I
OUT
MAX
(Note 3)
I
L
= 100
μ
A
I
L
= 20mA
I
L
= 50mA
I
L
= 100mA
I
L
= 150mA
(Note 4)
SHDN = V
IH
, I
L
= 0
SHDN = 0V
F
RE
1kHz
V
OUT
= 0V
Notes 5, 6
TC1054; TC1055
TC1186
V
IN
-V
OUT
Dropout Voltage
TC1055; TC1186
TC1186
2
65
85
180
270
50
0.05
64
300
0.04
160
10
260
120
250
400
80
0.5
450
mV
I
IN
I
INSD
PSRR
I
OUT
SC
V
OUT
/
P
D
T
SD
T
SD
eN
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Thermal Shutdown Die Temperature
Thermal Shutdown Hysteresis
Output Noise
μ
A
μ
A
dB
mA
V/W
°C
°C
nV/
Hz
I
L
= I
OUT
MAX
Note
1:
2:
V
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
)x 10
V
OUT
x
T
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
at V
= 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
, T
,
θ
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
Hysteresis voltage is referenced by V
.
The minimum V
IN
has to justify the conditions: V
IN
V
R
+ V
DROPOUT
and V
IN
2.7V for I
L
= 0.1mA to I
OUT
MAX
.
4:
5:
6:
7:
8:
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