
TC110
DS21355B-page 2
2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Voltage on VDD,VOUT, SHDN Pins ........ -0.3V to +12V
EXT Output Current ................................... ±100mA pk
Voltage on EXT Pin ........................-0.3V to VDD +0.3V
Power Dissipation.............................................150mW
Operating Temperature Range............. -40°C to +85°C
Storage Temperature Range .............. -40°C to +125°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC110 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Note 1, VIN =0.6 x VR,VDD =VOUT,TA =25°C, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
VDD
Operating Supply Voltage
2.0
—
10.0
V
Note 2
VSTART
Start-Up Supply Voltage
—
0.9
V
IOUT =1mA
VHOLD-UP Oscillator Hold-Up Voltage
—
0.7
V
IOUT =1mA
IDD
Boost Mode Supply Current
—
120
130
180
50
70
190
200
280
90
100
120
AV
OUT = SHDN = (0.95 x VR); fOSC =300kHz; VR =3.0V
VR =3.3V
VR =5.0V
fOSC = 100kHz; VR =3.0V
VR =3.3V
VR =5.0V
ISTBY
Standby Supply Current
—
20
22
11
34
35
38
20
22
AVOUT = SHDN =(VR +0.5V); fOSC =300kHz; VR =3.0V
VR =3.3V
VR =5.0V
fOSC = 100kHz; VR =3.0V
VR =3.3V
VR =5.0V
ISHDN
Shutdown Supply Current
—
0.05
0.5
A SHDN =GND, V
O =(VR x0.95)
fOSC
Oscillator Frequency
255
85
300
100
345
115
kHz
VOUT = SHDN = (0.95 x VR); fOSC =300kHz
fOSC = 100kHz
VOUT
Output Voltage
VR
x0.975
VR
x1.025
VNote 3
DTYMAX
Maximum Duty Cycle
(PWM Mode)
——
92
%
VOUT = SHDN =0.95x VR
DTYPFM
Duty Cycle (PFM Mode)
15
25
35
%
IOUT =0mA
VIH
SHDN Input Logic High
0.65
—
V
VOUT =(VR x0.95)
VIL
SHDN Input Logic Low
—
0.20
V
VOUT =(VR x0.95)
REXTH
EXT ON Resistance to VDD
—
32
29
20
47
43
29
VOUT = SHDN =(VR x0.95); VR =3.0V
VR =3.3V
VEXT =(VOUT –0.4V)
VR =5.0V
REXTL
EXT ON Resistance to GND
—
20
19
13
30
27
19
VOUT = SHDN =(VR x0.95); VR =3.0V
VR =3.3V
VEXT =0.4V
VR =5.0V
η
Efficiency
—
84
—
%
Note
1:
VR =3.0V, IOUT =120mA
VR =3.3V, IOUT =130mA
VR =5.0V, IOUT =200mA
2:
See Application Notes “Operating Mode” description for clarification.
3:
VR is the factory output voltage setting.