参数资料
型号: TC1301B-FFAVMFTR
元件分类: 固定正电压多路输出LDO稳压器
英文描述: DUAL OUTPUT, FIXED POSITIVE LDO REGULATOR, PDSO8
封装: 3 X 3 MM, 1 MM HEIGHT, PLASTIC, DFN-8
文件页数: 9/26页
文件大小: 1080K
代理商: TC1301B-FFAVMFTR
2003 Microchip Technology Inc.
DS21798A-page 17
TC1301A/B
6.0
APPLICATION CIRCUITS/
ISSUES
6.1
Typical Application
The TC1301A/B is used for applications that require
the integration of two LDO’s and a microcontroller
RESET.
FIGURE 6-1:
Typical Application Circuit
TC1301A/B.
6.1.1
APPLICATION INPUT CONDITIONS
6.2
Power Calculations
6.2.1
POWER DISSIPATION
The internal power dissipation within the TC1301A/B is
a function of input voltage, output voltage, output
current and quiescent current. The following equation
can be used to calculate the internal power dissipation
for each LDO.
EQUATION
In addition to the LDO pass element power dissipation,
there is power dissipation within the TC1301A/B as a
result of quiescent or ground current. The power
dissipation as a result of the ground current can be
calculated using the following equation. The VIN pin
quiescent current and the VDET pin current are both
considered. The VIN current is a result of LDO
quiescent current, while the VDET current is a result of
the voltage detector current.
EQUATION
The total power dissipated within the TC1301A/B is the
sum of the power dissipated in both of the LDO’s and
the P(IGND) term. Because of the CMOS construction,
the typical IGND for the TC1301A/B is 116 A.
Operating at a maximum of 4.2V results in a power
dissipation of 0.5 milli-watts. For most applications, this
is small compared to the LDO pass device power
dissipation and can be neglected.
The
maximum
continuous
operating
junction
temperature specified for the TC1301A/B is 125°C. To
estimate the internal junction temperature of the
TC1301A/B, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (R
θJA), thermal resistance from junction to
ambient, of the device. The thermal resistance from
junction to ambient for the 3X3DFN8 pin package is
estimated at 41°C/W.
EQUATION
Package Type = 3X3DFN8
Input Voltage Range = 2.7V to 4.2V
VIN maximum = 4.2V
VIN typical = 3.6V
VOUT1 = 300 mA maximum
VOUT2 = 150 mA maximum
System RESET Load = 10 k
8
4
1
2
3
RESET
GND
VDET
BATTERY
COUT1
1F Ceramic
X5R
CIN
1F
TC1301A
COUT2
1F Ceramic
X5R
Cbypass
10 nF Ceramic
Bypass
VIN
7
2.7V
to
4.2V
VOUT2 6
SHDN2
ON/OFF Control VOUT2
System RESET
2.8V @ 300 mA
1.8V
5
VOUT1
8
4
1
2
3
RESET
BATTERY
COUT1
1F Ceramic
X5R
CIN
1F
TC1301B
COUT2
1F Ceramic
X5R
Bypass
VIN
7
2.7V
to
4.2V
VOUT2 6
SHDN2
ON/OFF Control VOUT2
System RESET
2.8V @ 300 mA
1.8V
5
ON/OFF Control VOUT1
VOUT1
@ 150 mA
GND
@ 150 mA
SHDN1
PLDO
VIN MAX)
()
VOUT MIN
()
() IOUT MAX)
()
×
=
PLDO = LDO Pass device internal power dissipation
VIN(MAX) = Maximum input voltage
VOUT(MIN) = LDO minimum output voltage
PIGND
()
VIN MAX
()
IVIN IVDET
+
()
×
=
PI(GND) = Total current in ground pin.
VIN(MAX) = Maximum input voltage.
IVIN = Current flowing in the VIN pin with no output
current on either LDO output.
IVDET = Current in the VDET pin with RESET loaded.
TJMAX
()
PTOTAL RθJA
×
TAMAX
+
=
TJ(MAX) = Maximum continuous junction
temperature.
PTOTAL = Total device power dissipation.
R
θJA = Thermal resistance from junction to ambient.
TAMAX = Maximum Ambient Temperature.
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