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| 型号： | TC1301B-FHAVMF |
| 厂商： | Microchip Technology Inc. |
| 英文描述： | Dual LDO with Microcontroller RESET Function |
| 中文描述： | 双路LDO稳压器与微控制器的复位功能 |
| 文件页数： | 18/28页 |
| 文件大小： | 890K |
| 代理商： | TC1301B-FHAVMF |
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TC1301A/B
DS21798B-page 18
2005 Microchip Technology Inc.
The maximum power dissipation capability for a
package can be calculated given the junction to
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-4:
EQUATION 6-5:
EQUATION 6-6:
6.3
Typical Application
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation as a result of ground current is small
enough to be neglected.
6.3.1
POWER DISSIPATION EXAMPLE
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (R
θ
JA
) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface-mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors such as copper area and
thickness. Refer to AN792, “A Method To Determine
How Much Power a SOT32 Can Dissapate in Your
Application” (DS00792), for more information regarding
this subject.
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below:
Maximum Package Power Dissipation at 50°C
Ambient Temperature
Package
Package Type
=
Input Voltage
3X3DFN8
V
IN
= 2.7V to 4.2V
LDO Output Voltages and Currents
V
OUT1
= 2.8V
I
OUT1
= 300 mA
V
OUT2
= 1.8V
I
OUT2
= 150 mA
P
D MAX
)
T
------------------------–
T
R
θ
JA
)
(
)
=
P
D(MAX)
= Maximum device power dissipation.
T
J(MAX)
= Maximum continuous junction
temperature.
T
A(MAX)
= Maximum ambient temperature.
R
θ
JA
= Thermal resistance from junction-to-
ambient.
T
J RISE
)
P
D MAX
)
R
θ
JA
×
=
T
J(RISE)
= Rise in device junction temperature
over the ambient temperature.
P
D(MAX)
= Maximum device power dissipation.
R
θ
JA
= Thermal resistance from junction-to-
ambient.
T
J
T
J RISE
)
T
A
+
=
T
J
T
J(RISE)
= Rise in device junction temperature
over the ambient temperature.
T
A
= Ambient Temperature.
= Junction Temperature.
Maximum Ambient Temperature
T
A(MAX)
= 50°C
Internal Power Dissipation
Internal power dissipation is the sum of the power
dissipation for each LDO pass device.
P
LDO1(MAX)
= (V
IN(MAX)
- V
OUT1(MIN)
) x
I
OUT1(MAX)
P
LDO1
= (4.2V - (0.975 x 2.8V)) x 300 mA
P
LDO1
= 441.0 milliWatts
P
LDO2
= (4.2V - (0.975 X 1.8V)) x 150 mA
P
LDO2
= 366.8 milliWatts
P
TOTAL
= P
LDO1
+ P
LDO2
P
TOTAL
= 807.8 milliWatts
T
J(RISE)
= P
TOTAL
x Rq
JA
T
JRISE
= 807.8 milliWatts x 41.0
°
C/W
T
JRISE
= 33.1
°
C
T
J
= T
JRISE
+ T
A(MAX)
T
J
= 83.1°C
3X3DFN8 (41° C/W R
θ
JA
)
P
D(MAX)
= (125°C - 50°C) / 41° C/W
P
D(MAX)
= 1.83 Watts
MSOP8 (208° C/W R
θ
JA
)
P
D(MAX)
= (125°C - 50°C) / 208° C/W
P
D(MAX)
= 0.360 Watts
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相关代理商/技术参数 |
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| TC1301B-FHAVMFTR | 功能描述:低压差稳压器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| TC1301B-FHAVUA | 功能描述:低压差稳压器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| TC1301B-FHAVUATR | 功能描述:低压差稳压器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| TC1301B-GDDVMF | 功能描述:低压差稳压器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| TC1301B-GDDVMFTR | 功能描述:低压差稳压器 - LDO Dual CMOS LDO 300mA & 150mA RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
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