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参数资料
| 型号： | TC1313-CN1EUN |
| 厂商： | Microchip Technology Inc. |
| 英文描述： | 500 mA Synchronous Buck Regulator, + 300 mA LDO |
| 中文描述： | 500毫安同步降压稳压器，300 mA的LDO |
| 文件页数： | 6/28页 |
| 文件大小： | 392K |
| 代理商： | TC1313-CN1EUN |
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TC1313
DS21974A-page 6
2005 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS
Electrical Specifications:
Unless otherwise indicated, all limits are specified for: V
IN
= +2.7V to +5.5V
Wake-Up Time
(From SHDN2 mode), (V
OUT2
)
Settling Time
(From SHDN2 mode), (V
OUT2
)
Note
1:
The Minimum V
IN
has to meet two conditions: V
IN
≥
2.7V and V
IN
≥
V
RX
+ V
DROPOUT,
V
RX
= V
R1
or V
R2
.
2:
V
RX
is the regulator output voltage setting.
3:
TCV
OUT2
= ((V
OUT2max
– V
OUT2min
) * 10
6
)/(V
OUT2
* D
T
).
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current.
5:
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value measured at a 1V differential.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown.
7:
The integrated MOSFET switches have an integral diode from the L
X
pin to V
IN
, and from L
X
to P
GND
. In cases where
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to limit the junction temperature for these cases.
8:
V
IN1
and V
IN2
are supplied by the same input source.
t
WK
—
31
100
μs
I
OUT1
= I
OUT2
= 50 mA
t
S
—
100
—
μs
I
OUT1
= I
OUT2
= 50 mA
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Operating Junction Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Thermal Package Resistances
Thermal Resistance, 10L-DFN
T
J
T
A
T
J
-40
-65
—
—
—
—
+125
+150
+150
°C
°C
°C
Steady state
Transient
θ
JA
—
41
—
°C/W
Typical 4-layer board with Internal
Ground Plane and 2 Vias in Thermal
Pad
Typical 4-layer board with Internal
Ground Plane
Thermal Resistance, 10L-MSOP
θ
JA
—
113
—
°C/W
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
V
IN1
= V
IN2
= SHDN1,2 = 3.6V, C
OUT1
= C
IN
= 4.7 μF, C
OUT2
= 1μF, L
= 4.7 μH, V
OUT1
(ADJ) = 1.8V,
I
OUT1
= 100 ma, I
OUT2
= 0.1 mA T
A
= +25°C.
Boldface
specifications apply over the T
A
range of
-40°C to +85°C
.
Parameters
Sym
Min
Typ
Max
Units
Conditions
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC1313-DG0EMF | 功能描述:低压差稳压器 - LDO PWM/LDO combo RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| TC1313-DG0EMFTR | 功能描述:低压差稳压器 - LDO PWM/LDO combo RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| TC1313-PP0EMF | 功能描述:低压差稳压器 - LDO PWM LDO combo PG RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| TC1313-PP0EMFTR | 功能描述:低压差稳压器 - LDO PWM LDO combo PG RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| TC1313-RD1EMF | 功能描述:低压差稳压器 - LDO PWM/LDO combo RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
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