参数资料
型号: TC1410EPA
厂商: Microchip Technology
文件页数: 7/16页
文件大小: 0K
描述: IC MOSFET DVR .5A HS INV 8DIP
标准包装: 60
配置: 低端
输入类型: 反相
延迟时间: 30ns
电流 - 峰: 500mA
配置数: 1
输出数: 1
电源电压: 4.5 V ~ 16 V
工作温度: -40°C ~ 85°C
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
产品目录页面: 670 (CN2011-ZH PDF)
TC1410/TC1410N
3.0
PIN DESCRIPTIONS
3.3
CMOS Push-Pull Output
The descriptions of the pins are listed in Table 3-1.
(OUTPUT)
The MOSFET driver output is a low-impedance,
TABLE 3-1:
PIN FUNCTION TABLE
CMOS, push-pull style output, capable of driving a
capacitive load with 0.5 A peak currents.
Pin No.
Symbol
Description
1
V DD
Supply input, 4.5V to 16V
3.4
Ground
2
3
4
5
6
INPUT
NC
GND
GND
OUTPUT
Control input
No connection
Ground
Ground
CMOS push-pull output, common
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
to pin 7
7
8
OUTPUT
V DD
CMOS push-pull output, common
to pin 6
Supply input, 4.5V to 16V
3.1
Supply Input (V DD )
The V DD input is the bias supply for the MOSFET driver
and is rated for 4.5V to 16V with respect to the ground
pin. The V DD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A value of 1.0 μF is suggested.
3.2
Control Input (INPUT)
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
? 2003 Microchip Technology Inc.
DS21389C-page 7
相关PDF资料
PDF描述
TC1411EPA IC MOSFET DVR 1A HS INV 8DIP
TC1412EUA IC MOSFET DRIVER 2A HS INV 8MSOP
TC1413EUA IC MOSFET DRIVER 3A HS INV 8MSOP
TC1428COA713 IC MOSFET DVR 1.2A DUAL HS 8SOIC
TC2050-ARM2010 ARM 20-PIN TO TC2050 ADAPTER
相关代理商/技术参数
参数描述
TC1410EUA 功能描述:功率驱动器IC .5A Sngl Drvr Inv MSOP8 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC1410EUA713 功能描述:功率驱动器IC .5A Sngl Drvr Inv MSOP8 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC1410N 制造商:TELCOM 制造商全称:TelCom Semiconductor, Inc 功能描述:0.5A HIGH-SPEED MOSFET DRIVERS
TC1410NCOA 功能描述:功率驱动器IC .5A Sngl Drvr N-Inv SOIC8 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC1410NCOA713 功能描述:功率驱动器IC .5A Sngl Drvr N-Inv SOIC8 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube