参数资料
型号: TC1412N
厂商: TelCom Semiconductor, Inc.
英文描述: 2A HIGH-SPEED MOSFET DRIVERS
中文描述: 第2A高速MOSFET驱动器
文件页数: 1/5页
文件大小: 66K
代理商: TC1412N
4-195
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
TC1412
TC1412N
OUTPUT
INPUT
GND
EFINPUT
C = 10pF
300mV
INVERTING
OUTPUTS
NONINVERTING
OUTPUTS
V
DD
TC1411N
4.7V
TC1411
TC1411
1
2
3
4
V
DD
OUT
5
6
7
8
GND
V
DD
IN
NC
GND
NC = NO INTERNAL CONNECTION
2
6, 7
INVERTING
NOTE:
SOIC pinout is identical to DIP.
OUT
TC1411N
1
2
3
4
V
DD
OUT
5
6
7
8
GND
V
DD
IN
NC
GND
2
6, 7
NONINVERTING
OUT
PIN CONFIGURATIONS
FUNCTIONAL BLOCK DIAGRAM
2A HIGH-SPEED MOSFET DRIVERS
FEATURES
I
Latch-Up Protected: Will Withstand 500mA
Reverse Current
Input Will Withstand Negative Inputs Up to 5V
ESD Protected.....................................................4kV
High Peak Output Current .................................. 2A
Wide Operating Range ..........................4.5V to 16V
High Capacitive Load
Drive Capability .......................... 1000pF in 18nsec
Short Delay Time .................................. 35nsec Typ
Consistent Delay Times With Changes in
Supply Voltage
Matched Delay Times
Low Supply Current
— With Logic “1” Input ................................. 500
μ
A
— With Logic “0” Input ................................. 150
μ
A
Low Output Impedance ....................................... 4
Pinout Same as TC1410/11/13
I
I
I
I
I
I
I
I
I
I
I
GENERAL DESCRIPTION
The TC1412/1412N are 2A CMOS buffer/drivers. They
will not latch up under any conditions within their power and
voltage ratings. They are not subject to damage when up to
5V of noise spiking of either polarity occurs on the ground
pin. They can accept, without damage or logic upset, up to
500 mA of current of either polarity being forced back into
their output. All terminals are fully protected against up to 4
kV of electrostatic discharge.
As MOSFET drivers, the TC1412/1412N can easily
switch 1000 pF gate capacitance in 18 ns with matched rise
and fall times, and provide low enough impedance in both
the ON and the OFF states to ensure the MOSFET’s
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater accuracy.
ORDERING INFORMATION
Part No.
Package
Temp. Range
TC1412COA
TC1412CPA
TC1412EOA
TC1412EPA
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
0
°
C to +70
°
C
0
°
C to +70
°
C
– 40
°
C to +85
°
C
– 40
°
C to +85
°
C
TC1412NCOA
TC1412NCPA
TC1412NEOA
TC1412NEPA
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
0
°
C to +70
°
C
0
°
C to +70
°
C
– 40
°
C to +85
°
C
– 40
°
C to +85
°
C
TC1412/N-7 10/11/96
相关PDF资料
PDF描述
TC1412EOA 2A HIGH-SPEED MOSFET DRIVERS
TC1412NEPA 2A HIGH-SPEED MOSFET DRIVERS
TC1413EOA 3A HIGH-SPEED MOSFET DRIVERS
TC1413EOA 3A High-Speed MOSFET Drivers
TC1413 3A High-Speed MOSFET Drivers
相关代理商/技术参数
参数描述
TC1412NCOA 功能描述:功率驱动器IC 2A Sngl N-Inv RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC1412NCOA713 功能描述:功率驱动器IC 2A Sngl N-Inv RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC1412NCPA 功能描述:功率驱动器IC 2A Sngl N-Inv RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC1412NEOA 功能描述:功率驱动器IC 2A Sngl N-Inv RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC1412NEOA713 功能描述:功率驱动器IC 2A Sngl N-Inv RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube