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参数资料
| 型号： | TC1426 |
| 厂商： | Microchip Technology Inc. |
| 英文描述： | 1.2A Dual High-Speed MOSFET Drivers |
| 中文描述： | 1.2A的双路高速MOSFET驱动器 |
| 文件页数： | 3/6页 |
| 文件大小： | 81K |
| 代理商： | TC1426 |
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TELCOM SEMICONDUCTOR, INC.
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1.2A DUAL HIGH-SPEED MOSFET DRIVERS
TC1426
TC1427
TC1428
ELECTRICAL CHARACTERISTICS:
Over operating temperature range with 4.5V
≤
V
DD
+
≤
16V unless
otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
Logic 1, Input Voltage
3
—
—
V
Logic 0, Input Voltage
—
—
0.8
V
μ
A
Input Current
0V
≤
V
IN
≤
V
DD
– 10
—
10
High Output Voltage
Test Figures 1 and 2
V
DD
– 0.025
—
—
—
V
Low Output Voltage
Test Figures 1 and 2
—
0.025
V
Output Resistance
V
IN
= 0.8V,
I
OUT
= 10mA, V
DD
= 16V
V
IN
= 3V,
I
OUT
= 10mA, V
DD
= 16V
Withstand Reverse Current
—
15
23
—
10
18
I
Latch-Up Current
> 500
—
—
mA
Switching Time
(Note 1)
t
R
t
F
t
D1
t
D2
Power Supply
Rise Time
Test Figures 1 and 2
—
—
60
nsec
Fall Time
Test Figures 1 and 2
—
—
40
nsec
Delay Time
Test Figures 1 and 2
—
—
125
nsec
Delay Time
Test Figures 1 and 2
—
—
125
nsec
I
S
Power Supply Current
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
—
—
—
—
13
0.7
mA
Note:
1. Switching times guaranteed by design.
SUPPLY BYPASSING
Large currents are required to charge and discharge
capacitive loads quickly. For example, charging a 1000-pF
load to 16V in 25nsec requires an 0.8A current from the
device power supply.
To guarantee low supply impedance over a wide fre-
quency range, a parallel capacitor combination is recom-
mended for supply bypassing. Low-inductance ceramic
MLC capacitors with short lead lengths (< 0.5-in.) should
be used. A 1.0-
μ
F film capacitor in parallel with one or two
0.1-
μ
F ceramic MLC capacitors normally provides adequate
bypassing.
GROUNDING
The TC1426 and TC1428 contain inverting drivers.
Individual ground returns for the input and output circuits or
a ground plane should be used. This will reduce negative
feedback that causes degradation in switching speed char-
acteristics.
INPUT STAGE
The input voltage level changes the no-load or quies-
cent supply current. The N-channel MOSFET input stage
transistor drives a 2.5 mA current source load. With a logic
"1" input, the maximum quiescent supply current is 9mA.
Logic "0" input level signals reduce quiescent current to 500
μ
A maximum.
Unused driver inputs must be connected
to V
DD
or GND
. Minimum power dissipation occurs for logic
"0" inputs for the TC1426/27/28.
The drivers are designed with 100 mV of hysteresis.
This provides clean transitions and minimizes output stage
current spiking when changing states. Input voltage thresh-
olds are approximately 1.5V, making logic "1" input any
voltage greater than 1.5V up to V
DD
. Input current is less
than 1
μ
A over this range.
The TC1426/27/28 may be directly driven by the TL494,
SG1526/27, TC38C42, TC170 and similar switch-mode
power supply integrated circuits.
相关PDF资料 |
PDF描述 |
|---|---|
| TC1426CPA | 1.2A Dual High-Speed MOSFET Drivers |
| TC1427 | 1.2A Dual High-Speed MOSFET Drivers |
| TC1428 | 1.2A Dual High-Speed MOSFET Drivers |
| TC1428CPA | 1.2A Dual High-Speed MOSFET Drivers |
| TC1428COA | 1.2A Dual High-Speed MOSFET Drivers |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TC1426_06 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1.2A Dual High-Speed MOSFET Drivers |
| TC1426_13 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1.2A Dual High-Speed MOSFET Drivers |
| TC1426COA | 功能描述:功率驱动器IC 1.2A Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC1426COA | 制造商:Microchip Technology Inc 功能描述:MOSFET Driver IC |
| TC1426COA713 | 功能描述:功率驱动器IC 1.2A Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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