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参数资料
| 型号： | TC341-40 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 模拟信号调理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, CDIP22 |
| 封装： | WINDOWED, CERAMIC, DIP-22 |
| 文件页数： | 12/17页 |
| 文件大小： | 337K |
| 代理商： | TC341-40 |
TC341
780×488 PIXEL
CCD IMAGE SENSOR
SOCS083A – OCTOBER 2002
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Terminal Functions
TERMINAL
I/O
DESCRIPTION
NAME
NO.
I/O
DESCRIPTION
CDB
10
I
Charge clearing drain bias
GND
1, 4, 7, 17,
18, 19, 22
Chip substrate (SUB)
IAG
3, 20
I
Image area gate
IDB
21
I
Input diode bias
NC
11, 12, 16
–
No connection
ODB
2
I
Charge overflow drain bias
RSG
13
I
Detection node reset gate
SAG
5, 6
I
Storage area gate
SRG
15
I
Serial register gate
TRG
14
I
Transfer gate
VDD
9
I
Amplifier drain bias
VOUT
8
O
Sensor output
detailed description
The TC341 sensor consists of four basic functional blocks: the image-sensing area, the image storage area,
the serial register, and the charge detection amplifier. The location of each of these blocks is identified in the
functional block diagram.
image sensing and storage areas
Figure 1 shows a cross-section with potential-well diagrams and Figure 2 shows a top view of pixels in the
image-sensing and storage areas. As light enters silicon in the image-sensing area, electrons are generated
and collected in potential wells of the pixels. Applying a suitable dc bias to the antiblooming drain provides
blooming protection. The amount of charge that exceeds a specified level, determined by the ODB bias, is
drained away from the pixels. If it is necessary to remove all previously accumulated charge from the wells, a
short positive pulse must be applied to the drain. This marks the beginning of the new integration period. After
the integration cycle is completed, charge is quickly transferred into the memory where it waits for readout. The
lines can be read out from the memory in a sequential order to implement progressive scan, or two lines can
be summed together in the serial register to implement a pseudo-interlace scan. The true interlace scan is
implemented by skipping odd or even lines, depending on the readout field, and dumping the unwanted charge
into the clearing drain that is located next to the serial register.
Twenty-six columns at the left edge of the image-sensing area are shielded from incident light. These pixels
provide the dark reference that is used in subsequent video-processing circuits to restore the video black level.
An additional four dark lines, located between the image-sensing area and the image storage area, were added
for isolation.
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