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参数资料
| 型号： | TC426 |
| 厂商： | TelCom Semiconductor, Inc. |
| 英文描述： | 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS |
| 中文描述： | 1.5A的双高速功率MOSFET驱动器 |
| 文件页数： | 2/5页 |
| 文件大小： | 76K |
| 代理商： | TC426 |
4-170
TELCOM SEMICONDUCTOR, INC.
TC426
TC427
TC428
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
ELECTRICAL CHARACTERISTICS:
T
A
= +25
°
C with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Input
V
IH
Logic 1, High Input Voltage
V
IL
Logic 0, Low Input Voltage
I
IN
Input Current
0V
≤
V
IN
≤
V
DD
Output
V
OH
High Output Voltage
V
OL
Low Output Voltage
R
OH
High Output Resistance
I
OUT
= 10 mA, V
DD
= 18V
R
OL
Low Output Resistance
I
OUT
= 10 mA, V
DD
= 18V
I
PK
Peak Output Current
Switching Time
(Note 1)
t
R
Rise Time
Test Figure 1/2
t
F
Fall Time
Test Figure 1/2
t
D1
Delay Time
Test Figure 1/2
t
D2
Delay Time
Test Figure 1/2
Power Supply
I
S
Power Supply Current
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
ELECTRICAL CHARACTERISTICS:
Over Operating Temperature Range with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
Input
V
IH
Logic 1, High Input Voltage
V
IL
Logic 0, Low Input Voltage
I
IN
Input Current
0V
≤
V
IN
≤
V
DD
Output
V
OH
High Output Voltage
V
OL
Low Output Voltage
R
OH
High Output Resistance
I
OUT
= 10 mA, V
DD
= 18V
R
OL
Low Output Resistance
I
OUT
= 10 mA, V
DD
= 18V
Switching Time
(Note 1)
t
R
Rise Time
Test Figure 1/2
t
F
Fall Time
Test Figure 1/2
t
D1
Delay Time
Test Figure 1/2
t
D2
Delay Time
Test Figure 1/2
Power Supply
I
S
Power Supply Current
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
Min
Typ
Max
Unit
2.4
—
–1
—
—
—
—
0.8
1
V
V
μ
A
V
DD
– 0.025
—
—
—
—
—
—
10
6
1.5
—
V
V
A
0.025
15
10
—
—
—
—
—
—
—
—
—
30
30
50
75
nsec
nsec
nsec
nsec
—
—
—
—
8
mA
mA
0.4
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, Any Terminal.... V
DD
+ 0.3V to GND – 0.3V
Power Dissipation (T
A
≤
70
°
C)
Plastic ...............................................................730mW
CerDIP ..............................................................800mW
SOIC .................................................................470mW
Derating Factor
Plastic ............................................................. 8mW/
°
C
CerDIP ......................................................... 6.4mW/
°
C
SOIC ............................................................... 4mW/
°
C
Operating Temperature Range
C Version .................................................0
°
C to +70
°
C
I Version..............................................– 25
°
C to +85
°
C
E Version ............................................– 40
°
C to +85
°
C
M Version..........................................– 55
°
C to +125
°
C
Maximum Chip Temperature.................................+150
°
C
Storage Temperature Range ................– 65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) .................+300
°
C
NOTE:
1. Switching times guaranteed by design.
2.4
—
–10
—
—
—
—
0.8
10
V
V
μ
A
V
DD
– 0.025
—
—
—
—
—
13
8
—
V
V
0.025
20
15
—
—
—
—
—
—
—
—
60
30
75
120
nsec
nsec
nsec
nsec
—
—
—
—
12
0.6
mA
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC426_06 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1.5A Dual High-Speed Power MOSFET Drivers |
| TC426_13 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1.5A Dual High-Speed Power MOSFET Drivers |
| TC426COA | 功能描述:功率驱动器IC 1.5A Dual H-Speed RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC426COA | 制造商:Microchip Technology Inc 功能描述:MOSFET Driver IC |
| TC426COA713 | 功能描述:功率驱动器IC 1.5A Dual H-Speed RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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