参数资料
型号: TC426CPA
厂商: TelCom Semiconductor, Inc.
英文描述: 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
中文描述: 1.5A的双高速功率MOSFET驱动器
文件页数: 4/5页
文件大小: 76K
代理商: TC426CPA
4-172
TELCOM SEMICONDUCTOR, INC.
TC426
TC427
TC428
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TYPICAL CHARACTERISTICS
Rise and Fall Times vs
Supply Voltage
1
2
SUPPLY CURRENT (mA)
3
4
5
6
20
15
10
5
0
S
Supply Voltage vs
Quiescent Supply Current
NO LOAD
BOTH INPUTS LOGIC "1"
TA
°
C
0
20
15
10
5
0
S
50
100
150
200
250
300
SUPPLY CURRENT (
μ
A)
Supply Voltage vs
Quiescent Supply Current
NO LOAD
BOTH INPUTS LOGIC "0"
A
°
C
100
1
10
1000
10K
T
CAPACITIVE LOAD (pF)
Rise and Fall Times vs
Capacitive Load
10
1K
100
30
20
10
0
–25
0
25
TEMPERATURE (
°
C)
150
T
Rise and Fall Times vs
Temperature
40
50
75
100
125
35
25
15
R
t
F
t
80
70
60
50
30
0
D
Delay Times vs Supply Voltage
40
90
SUPPLY VOLTAGE (V)
5
10
15
20
D1
t
D2
t
CL
TA
= 1000pF
= +25
°
C
90
80
70
60
40
30
–25
0
50
100
150
D
TEMPERATURE (
°
C)
Delay Times vs Temperature
50
100
25
75
125
D1
t
CL
VDD
= 1000pF
= 18V
D2
t
70
60
50
40
20
0
10
S
Supply Current vs
Capacitive Load
30
80
400kHz
200kHz
20kHz
TA
VDD
= +25
°
C
= 18V
100
1000
10K
CAPACITIVE LOAD (pF)
10
0.96
0.72
0.48
0.24
0
10
O
Low Output vs Voltage
1.20
TA= +25
°
C
20 30 40 50 60 70 80 90 100
CURRENT SUNK (mA)
VDD= 5V
10V
15V
1.76
1.32
0.88
0.44
0
10
High Output vs Voltage
2.20
TA= +25
°
C
20 30 40 50 60 70 80 90 100
CURRENT SOURCED (mA)
18V
VDD= 8V
V
D
O
13V
20
10
0
1
S
Supply Current vs Frequency
30
10
FREQUENCY (kHz)
100
1000
CL
TA
= 1000pF
= +25
°
C
VDD= 18V
10V
5V
60
50
40
30
10
0
5
10
15
20
T
SUPPLY VOLTAGE (V)
70
R
t
F
t
CL
TA
= 1000pF
= +25
°
C
CL
VDD
= 1000 pF
= 18V
20
R
t
F
t
TA
VDD
= +25
°
C
= 18V
200
0
400
600
800
1000
1200
1400
1600
0
10
20
30
40
AMBIENT TEMPERATURE (
°
C)
50
60
70
80
90
100
110
120
M
8 Pin DIP
Thermal Derating Curves
8 Pin CerDIP
8 Pin SOIC
相关PDF资料
PDF描述
TC426EPA 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC426MJA 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC427 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC427EPA 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC427MJA 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
相关代理商/技术参数
参数描述
TC426CPA 制造商:Microchip Technology Inc 功能描述:1.5A MOSFET DRIVER DUAL DIP8 426
TC426EOA 功能描述:功率驱动器IC 1.5A Dual H-Speed RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC426EOA713 功能描述:功率驱动器IC 1.5A Dual H-Speed RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC426EPA 功能描述:功率驱动器IC 1.5A Dual H-Speed RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC426EUA 功能描述:功率驱动器IC 1.5A Dual H-Speed RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube