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| 型号： | TC426EPA |
| 厂商： | Microchip Technology |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 1.5A DUAL HS 8-DIP |
| 标准包装： | 60 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 50ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
TC426/TC427/TC428
1.0
ELECTRICAL
*Stresses above those listed under “Absolute
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage ..................................................... +20V
Input Voltage, Any Terminal
................................... V DD + 0.3V to GND – 0.3V
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
Power Dissipation (T A ≤ 70°C)
PDIP........................................................ 730 mW
CERDIP .................................................. 800 mW
SOIC ....................................................... 470 mW
Derating Factor
PDIP....................................................... 8 mW/°C
CERDIP .............................................. 6.4 mW/°C
SOIC ...................................................... 4 mW/°C
Operating Temperature Range
C Version ........................................ 0°C to +70°C
I Version ....................................... -25°C to +85°C
E Version...................................... -40°C to +85°C
M Version ................................... -55°C to +125°C
Storage Temperature Range.............. -65°C to +150°C
TC426/TC427/TC428 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: T A = +25°C with 4.5V ≤ V DD ≤ 18V, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Input
V IH
V IL
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
2.4
—
—
—
—
0.8
V
V
I IN
Input Current
-1
—
1
μ A
0V ≤ V IN ≤ V DD
Output
V OH
V OL
High Output Voltage
Low Output Voltage
V DD – 0.025
—
—
—
—
0.025
V
V
R OH
R OL
I PK
High Output Resistance
Low Output Resistance
Peak Output Current
—
—
—
10
6
1.5
15
10
—
Ω
Ω
A
I OUT = 10 mA, V DD = 18V
I OUT = 10 mA, V DD = 18V
Switching Time (Note 1)
t R
t F
t D1
t D2
Rise Time
Fall Time
Delay Time
Delay Time
—
—
—
—
—
—
—
—
30
30
50
75
nsec
nsec
nsec
nsec
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Power Supply
I S
Power Supply Current
—
—
8
mA
V IN = 3V (Both Inputs)
Note
1:
Switching times ensured by design.
? 2006 Microchip Technology Inc.
—
—
0.4
V IN = 0V (Both Inputs)
DS21415C-page 3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC426EUA | 功能描述:功率驱动器IC 1.5A Dual H-Speed RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC426EUA713 | 功能描述:功率驱动器IC 1.5A Dual H-Speed RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC426IJA | 功能描述:功率驱动器IC 1.5A Dual H-Speed RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC426MJA | 功能描述:功率驱动器IC 1.5A Dual H-Speed RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC427 | 制造商:TELCOM 制造商全称:TelCom Semiconductor, Inc 功能描述:1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS |
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