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| 型号： | TC427CPA |
| 厂商： | Microchip Technology |
| 文件页数： | 6/16页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 1.5A DUAL HS 8-DIP |
| 标准包装： | 60 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 50ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 670 (CN2011-ZH PDF) |
| 其它名称： | 158-1055 158-1055-ND |
TC426/TC427/TC428
3.0
APPLICATIONS INFORMATION
3.4
Power Dissipation
3.1
Supply Bypassing
The supply current vs frequency and supply current
vs capacitive load characteristic curves will aid in
Charging and discharging large capacitive loads
quickly requires large currents. For example, charging
a 1000 pF load to 18V in 25 nsec requires an 0.72A
current from the device power supply.
To ensure low supply impedance over a wide frequency
range, a parallel capacitor combination is recom-
mended for supply bypassing. Low-inductance ceramic
disk capacitors with short lead lengths (< 0.5 in.) should
be used. A 1 μ F film capacitor in parallel with one or two
0.1 μ F ceramic disk capacitors normally provides
adequate bypassing.
3.2 Grounding
The TC426 and TC428 contain inverting drivers.
Ground potential drops developed in common ground
determining power dissipation calculations.
The TC426/TC427/TC428 CMOS drivers have greatly
reduced quiescent DC power consumption. Maximum
quiescent current is 8 mA compared to the DS0026 40
mA specification. For a 15V supply, power dissipation
is typically 40 mW.
Two other power dissipation components are:
? Output stage AC and DC load power.
? Transition state power.
Output stage power is:
Po = P DC + PAC
= Vo (I DC ) + f C L V S2
Where:
impedances from input to output will appear as
negative feedback and degrade switching speed
characteristics.
Individual ground returns for the input and output
Vo
I DC
f
Vs
= DC output voltage
= DC output load current
= Switching frequency
= Supply voltage
circuits or a ground plane should be used.
In power MOSFET drive applications the P DC term is
3.3
Input Stage
negligible. MOSFET power transistors are high-imped-
ance, capacitive input devices. In applications where
The input voltage level changes the no-load or
quiescent supply current. The N-channel MOSFET
input stage transistor drives a 2.5 mA current source
load. With a logic ‘1’ input, the maximum quiescent
supply current is 8 mA. Logic ‘0’ input level signals
resistive loads or relays are driven, the P DC component
will normally dominate.
The magnitude of P AC is readily estimated for several
cases:
reduce quiescent current to 0.4 mA maximum.
A.
B.
Minimum power dissipation occurs for logic ‘0’ inputs
for the TC426/TC427/TC428. Unused driver inputs
must be connected to V DD or GND .
The drivers are designed with 100 mV of hysteresis.
This provides clean transitions and minimizes output
1. f
2. C L
3. Vs
4. P AC
= 200 kHZ
=1000 pf
= 18V
= 65 mW
1. f
2. C L
3. Vs
4. P AC
= 200 kHz
=1000 pf
= 15V
= 45 mW
stage current spiking when changing states. Input
voltage thresholds are approximately 1.5V, making the
device TTL compatible over the 4.5V to 18V supply
operating range. Input current is less than 1 μ A over
this range.
The TC426/TC427/TC428 may be directly driven by
the TL494, SG1526/1527, SG1524, SE5560, and
similar switch-mode power supply integrated circuits.
DS21415C-page 6
During output level state changes, a current surge will
flow through the series connected N and P channel
output MOSFETS as one device is turning “ON” while
the other is turning “OFF”. The current spike flows only
during output transitions. The input levels should not be
maintained between the logic ‘0’ and logic ‘1’ levels.
Unused driver inputs must be tied to ground and
not be allowed to float. Average power dissipation will
be reduced by minimizing input rise times. As shown in
the characteristic curves, average supply current is
frequency dependent.
? 2006 Microchip Technology Inc.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC427CPA | 制造商:Microchip Technology Inc 功能描述:MOSFET Driver IC |
| TC427CPAG | 功能描述:功率驱动器IC 1.5A Dual Hi Spd Lead Free Package RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC427EOA | 功能描述:功率驱动器IC 1.5A Dual H-Speed RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC427EOA713 | 功能描述:功率驱动器IC 1.5A Dual H-Speed RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC427EPA | 功能描述:功率驱动器IC 1.5A Dual H-Speed RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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