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| 型号： | TC428EPA |
| 厂商： | Microchip Technology |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 1.5A DUAL HS 8-DIP |
| 标准包装： | 60 |
| 配置： | 低端 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 50ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
TC426/TC427/TC428
1.0
ELECTRICAL
*Stresses above those listed under “Absolute
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage ..................................................... +20V
Input Voltage, Any Terminal
................................... V DD + 0.3V to GND – 0.3V
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
Power Dissipation (T A ≤ 70°C)
PDIP........................................................ 730 mW
CERDIP .................................................. 800 mW
SOIC ....................................................... 470 mW
Derating Factor
PDIP....................................................... 8 mW/°C
CERDIP .............................................. 6.4 mW/°C
SOIC ...................................................... 4 mW/°C
Operating Temperature Range
C Version ........................................ 0°C to +70°C
I Version ....................................... -25°C to +85°C
E Version...................................... -40°C to +85°C
M Version ................................... -55°C to +125°C
Storage Temperature Range.............. -65°C to +150°C
TC426/TC427/TC428 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: T A = +25°C with 4.5V ≤ V DD ≤ 18V, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Input
V IH
V IL
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
2.4
—
—
—
—
0.8
V
V
I IN
Input Current
-1
—
1
μ A
0V ≤ V IN ≤ V DD
Output
V OH
V OL
High Output Voltage
Low Output Voltage
V DD – 0.025
—
—
—
—
0.025
V
V
R OH
R OL
I PK
High Output Resistance
Low Output Resistance
Peak Output Current
—
—
—
10
6
1.5
15
10
—
Ω
Ω
A
I OUT = 10 mA, V DD = 18V
I OUT = 10 mA, V DD = 18V
Switching Time (Note 1)
t R
t F
t D1
t D2
Rise Time
Fall Time
Delay Time
Delay Time
—
—
—
—
—
—
—
—
30
30
50
75
nsec
nsec
nsec
nsec
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Power Supply
I S
Power Supply Current
—
—
8
mA
V IN = 3V (Both Inputs)
Note
1:
Switching times ensured by design.
? 2006 Microchip Technology Inc.
—
—
0.4
V IN = 0V (Both Inputs)
DS21415C-page 3
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