参数资料
型号: TC429EPA
厂商: Microchip Technology
文件页数: 5/18页
文件大小: 0K
描述: IC MOSFET DRIVER 6A HS 8DIP
标准包装: 60
配置: 低端
输入类型: 反相
延迟时间: 53ns
电流 - 峰: 6A
配置数: 1
输出数: 1
电源电压: 7 V ~ 18 V
工作温度: -40°C ~ 85°C
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
TC429
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, T A = +25°C with 7V ≤ V DD ≤ 18V.
60
T A = +25 ° C
70
T A = +25 ° C
50
C L = 2500 pF
60
V DD = +15V
50
40
40
30
t F
30
400 kHz
20
20
t R
10
200 kHz
20 kHz
10
5
10 15
20
0
10
100 1K
10K
SUPPLY VOLTAGE (V)
CAPACITIVE LOAD (pF)
FIGURE 2-1:
Rise/Fall Times vs. Supply
FIGURE 2-4:
Supply Current vs.
Voltage.
60
C L = 2500 pF
Capacitive Load.
90
C L = 2500 pF
50
40
V DD = +15V
80
70
V DD = +15V
30
20
t F
t R
60
50
t D2
t D1
10
-50 -25
0
25 50 75 100 125 150
40
-50 -25
0
25 50 75 100 125 150
TEMPERATURE ( ° C)
TEMPERATURE ( ° C)
FIGURE 2-2:
Temperature.
100
Rise/Fall Times vs.
T A = +25 ° C
V DD = +15V
FIGURE 2-5:
Temperature.
140
120
Delay Times vs.
T A = +25 ° C
C L = 2500 pF
t F
t R
100
10
80
t D2
60
t D1
1
100
1K
10K
40
5
10 15
20
CAPACITIVE LOAD (pF)
SUPPLY VOLTAGE (V)
FIGURE 2-3:
Rise/Fall Times vs.
FIGURE 2-6:
Delay Times vs. Supply
Capacitive Load.
? 2003 Microchip Technology Inc.
Voltage.
DS21416C-page 5
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