参数资料
型号: TC4405MJA
厂商: TelCom Semiconductor, Inc.
英文描述: 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS
中文描述: 1.5A的双开漏MOSFET驱动器
文件页数: 3/6页
文件大小: 84K
代理商: TC4405MJA
4-221
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
ELECTRICAL CHARACTERISTICS:
Specifications measured over operating temperature range
with 4.5V
V
DD
18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
I
PK
I
DC
I
R
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
– 10
0.8
10
V
V
μ
A
– 0V
V
IN
V
DD
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current (Any Drain)
Continuous Output Current (Any Drain)
Latch-Up Protection (Any Drain)
Withstand Reverse Current
Switching Time (Note 1)
t
R
Rise Time
t
F
Fall Time
t
D1
Delay Time
t
D2
Delay Time
Power Supply
I
S
Power Supply Current
V
DD
– 0.025
>500
9
1.5
V
V
A
mA
mA
0.025
12
100
I
OUT
= 10 mA, V
DD
= 18V; Any Drain
Duty cycle <2%, t
300
μ
sec
Duty cycle <2%, t
300
μ
sec
Figure 1, C
L
= 1000 pF
Figure 1, C
L
= 1000 pF
Figure 1, C
L
= 1000 pF
Figure 1, C
L
= 1000 pF
40
40
40
60
nsec
nsec
nsec
nsec
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
8
mA
0.6
NOTE
1. Switching times guaranteed by design.
PIN CONFIGURATIONS (DIP AND SOIC)
Circuit Layout Guidelines
Avoid long power supply and ground traces (added
inductance causes unwanted voltage transients). Use power
and ground planes wherever possible. In addition, it is
advisable that low ESR bypass capacitors (4.7
μ
F or 10
μ
F
1
8
2
7
3
6
4
5
TC4405
B BOTTOM
COM
IN B
IN A
VDD
B TOP
A BOTTOM
A TOP
1
8
2
7
3
6
4
5
TC4405
B BOTTOM
COM
IN B
IN A
VDD
B TOP
A BOTTOM
A TOP
1
8
2
7
3
6
4
5
TC4404
B BOTTOM
COM
IN B
IN A
VDD
B TOP
A BOTTOM
A TOP
1
8
2
7
3
6
4
5
TC4404
B BOTTOM
COM
IN B
IN A
VDD
B TOP
A BOTTOM
A TOP
tantalum) be placed as close to the driver as possible. The
driver should be physically located as close to the device it
is driving as possible to minimize the length of the output
trace.
TC4404
TC4405
1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
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