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参数资料
| 型号： | TC4420EMF |
| 厂商： | Microchip Technology |
| 文件页数： | 3/20页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 6A HS 8DFN |
| 标准包装： | 60 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 55ns |
| 电流 - 峰： | 6A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-S（6x5） |
| 包装： | 管件 |
TC4420/TC4429
1.0
ELECTRICAL
CHARACTERISTICS
? Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
Absolute Maximum Ratings?
Supply Voltage ..................................................... +20V
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Input Voltage .................................. – 5V to V DD + 0.3V
Input Current (V IN > V DD )................................... 50 mA
Power Dissipation (T A ≤ 70°C)
5-Pin TO-220 .................................................... 1.6W
CERDIP ....................................................... 800 mW
DFN ............................................ ................... Note 2
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW
Package Power Dissipation (T A ≤ 25°C)
5-Pin TO-220 (With Heatsink) ........................ 12.5W
Thermal Impedances (To Case)
5-Pin TO-220 R θ J-C ...................................... 10°C/W
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T A = +25°C with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘ 1 ’, High Input
V IH
2.4
1.8
—
V
Voltage
Logic ‘ 0 ’, Low Input Voltage
Input Voltage Range
V IL
V IN
—
–5
1.3
—
0.8
V DD +0.3
V
V
Input Current
I IN
–10
—
+10
μA
0V ≤ V IN ≤ V DD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection
V OH
V OL
R OH
R OL
I PK
I REV
V DD – 0.025
—
—
—
—
—
—
—
2.1
1.5
6.0
> 1.5
—
0.025
2.8
2.5
—
—
V
V
?
?
A
A
DC TEST
DC TEST
I OUT = 10 mA, V DD = 18V
I OUT = 10 mA, V DD = 18V
V DD = 18V
Duty cycle ≤ 2%, t ≤ 300 μsec
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
t R
t F
t D1
t D2
—
—
—
—
25
25
55
55
35
35
75
75
ns
ns
ns
ns
Figure 4-1 , C L = 2,500 pF
Figure 4-1 , C L = 2,500 pF
Figure 4-1
Figure 4-1
Power Supply
Power Supply Current
Operating Input Voltage
I S
V DD
—
—
4.5
0.45
55
—
1.5
150
18
mA
μA
V
V IN = 3V
V IN = 0V
Note 1:
2:
Switching times ensured by design.
Package power dissipation is dependent on the copper pad area on the PCB.
? 2004 Microchip Technology Inc.
DS21419C-page 3
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