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| 型号： | TC4422CPA |
| 厂商： | Microchip Technology |
| 文件页数： | 3/18页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR 9A N-INV 8DIP |
| 标准包装： | 60 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 30ns |
| 电流 - 峰： | 9A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 671 (CN2011-ZH PDF) |
| 其它名称： | 158-1108 158-1108-ND |
TC4421/TC4422
1.0
ELECTRICAL
CHARACTERISTICS
? Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
Absolute Maximum Ratings?
Supply Voltage ..................................................... +20V
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Input Voltage .................... (V DD + 0.3V) to (GND – 5V)
Input Current (V IN > V DD )................................... 50 mA
Package Power Dissipation (T A ≤ 70°C)
5-Pin TO-220 .................................................... 1.6W
DFN .............................................................. Note 2
PDIP ............................................................ 730 mW
SOIC............................................................ 750 mW
Package Power Dissipation (T A ≤ 25°C)
5-Pin TO-220 (With Heatsink) ........................ 12.5W
Thermal Impedances (To Case)
5-Pin TO-220 R θ J-C ...................................... 10°C/W
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T A = +25°C with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘ 1 ’, High Input Voltage
Logic ‘ 0 ’, Low Input Voltage
V IH
V IL
2.4
—
1.8
1.3
—
0.8
V
V
Input Current
I IN
–10
—
+10
μA
0V ≤ V IN ≤ V DD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
V OH
V OL
R OH
R OL
I PK
I DC
V DD – 0.025
—
—
—
—
2
—
—
1.4
0.9
9.0
—
—
0.025
—
1.7
—
—
V
V
?
?
A
A
DC TEST
DC TEST
I OUT = 10 mA, V DD = 18V
I OUT = 10 mA, V DD = 18V
V DD = 18V
10V ≤ V DD ≤ 18V, T A = +25°C
( TC4421/TC4422 CAT only) (Note 3)
Latch-Up Protection
I REV
—
>1.5
—
A
Duty cycle ≤ 2%, t ≤ 300 μsec
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
t R
t F
t D1
t D2
—
—
—
—
60
60
30
33
75
75
60
60
ns
ns
ns
ns
Figure 4-1 , C L = 10,000 pF
Figure 4-1 , C L = 10,000 pF
Figure 4-1
Figure 4-1
Power Supply
Power Supply Current
Operating Input Voltage
I S
V DD
—
—
4.5
0.2
55
—
1.5
150
18
mA
μA
V
V IN = 3V
V IN = 0V
Note 1:
2:
3:
Switching times ensured by design.
Package power dissipation is dependent on the copper pad area on the PCB.
Tested during characterization, not production tested.
? 2004 Microchip Technology Inc.
DS21420D-page 3
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