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参数资料
| 型号： | TC4422VPA |
| 厂商： | Microchip Technology |
| 文件页数： | 7/18页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 9A N-INV 8DIP |
| 标准包装： | 60 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 30ns |
| 电流 - 峰： | 9A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
TC4421/TC4422
Note: Unless otherwise indicated, T A = +25°C with 4.5V ≤ V DD ≤ 18V.
120
50
110
100
90
80
V DD = 10V
C LOAD = 10,000 pF
45
40
V DD = 18V
C LOAD = 10,000 pF
V IN = 5V
70
60
35
50
40
30
20
t D1
t D2
30
25
t D2
t D1
10
0
1
2
3
4 5 6 7 8
Input Amplitude (V)
9
10
20
–60 –40 –20
0
20 40
T A ( ° C)
60
80
100 120
FIGURE 2-13:
Amplitude.
10-6
Propagation Delay vs. Input
FIGURE 2-16:
Temperature.
103
Propagation Delay vs.
V DD = 18V
10-7
Input = 1
102
Input = 0
10-8
4 6 8 10 12 14 16 18
V DD (V)
NOTE: The values on this graph represent the loss seen
-60 -40 -20
0
20
40 60
T J ( ° C)
80 100 120
by the driver during a complete cycle. For the loss
in a single transition, divide the stated value by 2.
FIGURE 2-14:
Crossover Energy vs.
Supply Voltage.
6
5.5
FIGURE 2-17:
vs. Temperature.
6
5.5
Quiescent Supply Current
5
4.5
4
3.5
T J = 150 ° C
5
4.5
4
3.5
3
2.5
3
2.5
T J = 150 ° C
2
1.5
T J = 25 ° C
2
1.5
1
0.5
4
6
8
10 12
V DD (V)
14
16
18
1
0.5
4
6
T J = 25 ° C
8
10 12
V DD (V)
14
16
18
FIGURE 2-15: High-State Output
Resistance vs. Supply Voltage.
? 2004 Microchip Technology Inc.
FIGURE 2-18: Low-State Output
Resistance vs. Supply Voltage.
DS21420D-page 7
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