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| 型号： | TC4423AVMF713 |
| 厂商： | Microchip Technology |
| 文件页数： | 9/22页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 3A DUAL HS 8DFN |
| 标准包装： | 3,300 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 40ns |
| 电流 - 峰： | 4.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-S（6x5） |
| 包装： | 带卷 (TR) |
TC4423A/TC4424A/TC4425A
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE (1)
8-Pin PDIP
1
2
—
3
—
—
4
—
—
5
—
6
—
7
—
8
—
8-Pin
DFN
1
2
—
3
—
—
4
—
—
5
—
6
—
7
—
8
PAD
16-Pin
SOIC
(Wide)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
—
Symbol
NC
IN A
NC
GND
GND
NC
IN B
NC
NC
OUT B
OUT B
V DD
V DD
OUT A
OUT A
NC
NC
No connection
Input A
No connection
Ground
Ground
No connection
Input B
No connection
No connection
Output B
Output B
Supply input
Supply input
Output A
Output A
No connection
Exposed Metal Pad
Description
Note 1:
Duplicate pins must be connected for proper operation.
3.1
Inputs A and B
3.4
Ground (GND)
Inputs A and B are TTL/CMOS compatible inputs that
control outputs A and B, respectively. These inputs
have 300 mV of hysteresis between the high and low
input levels, allowing them to be driven from slow rising
and falling signals, and to provide noise immunity.
Ground is the device return pin. The ground pin should
have a low-impedance connection to the bias supply
source return. High peak currents will flow out the
ground pin when the capacitive load is being
discharged.
3.2
Outputs A and B
3.5
Exposed Metal Pad
Outputs A and B are CMOS push-pull outputs that are
capable of sourcing and sinking 3A peaks of current
(V DD = 18V). The low output impedance ensures the
gate of the external MOSFET will stay in the intended
state even during large transients. These outputs also
have a reverse current latch-up rating of 1.5A.
The exposed metal pad of the DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a printed circuit board to aid in heat
removal from the package.
3.3
Supply Input (V DD )
V DD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local ceramic capacitor.
This bypass capacitor provides a localized low-
impedance path for the peak currents that are to be
provided to the load.
? 2007 Microchip Technology Inc.
DS21998B-page 9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC4423AVOA | 功能描述:功率驱动器IC 3A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4423AVOA | 制造商:Microchip Technology Inc 功能描述:; LEADED PROCESS COMPATIBLE:YES; PEAK RE |
| TC4423AVOA713 | 功能描述:功率驱动器IC 3A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4423AVOE | 功能描述:功率驱动器IC 3A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4423AVOE713 | 功能描述:功率驱动器IC 3A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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