- 您现在的位置：买卖IC网 > PDF目录17174 > TC4423AVMF (Microchip Technology)IC MOSFET DVR 3A DUAL HS 8DFN PDF资料下载
参数资料
| 型号： | TC4423AVMF |
| 厂商： | Microchip Technology |
| 文件页数： | 3/22页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 3A DUAL HS 8DFN |
| 标准包装： | 60 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 40ns |
| 电流 - 峰： | 4.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-S（6x5） |
| 包装： | 管件 |
TC4423A/TC4424A/TC4425A
1.0
ELECTRICAL
CHARACTERISTICS
? Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings ?
Supply Voltage ................................................................+20V
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Input Voltage, IN A or IN B .......... (V DD + 0.3V) to (GND – 5V)
Package Power Dissipation (T A =50°C)
8L PDIP .......................................................................1.2W
8L SOIC.................................................................... 0.61W
16L SOIC.....................................................................1.1W
8L DFN .................................................................... Note 3
DC CHARACTERISTICS (NOTE 2)
Electrical Specifications: Unless otherwise indicated, T A = +25°C, with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘ 1 ’, High Input Voltage
Logic ‘ 0 ’, Low Input Voltage
V IH
V IL
2.4
—
1.5
1.3
—
0.8
V
V
Input Current
Input Voltage
I IN
V IN
–1
-5
—
—
1
V DD +0.3
μA
V
0V ≤ V IN ≤ V DD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection With-
stand Reverse Current
V OH
V OL
R OH
R OL
I PK
I REV
V DD – 0.025
—
—
—
—
—
—
—
2.2
2.8
4.5
>1.5
—
0.025
3.0
3.5
—
—
V
V
Ω
Ω
A
A
DC Test
DC Test
I OUT = 10 mA, V DD = 18V
I OUT = 10 mA, V DD = 18V
10V ≤ V DD ≤ 18V (Note 2)
Duty cycle ≤ 2%, t ≤ 300 μsec.
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
t R
t F
t D1
t D2
—
—
—
—
12
12
40
41
21
21
48
48
ns
ns
ns
ns
Figure 4-1, Figure 4-2,
C L = 1800 pF
Figure 4-1, Figure 4-2,
C L = 1800 pF
Figure 4-1, Figure 4-2,
C L = 1800 pF
Figure 4-1, Figure 4-2,
C L = 1800 pF
Power Supply
Supply Voltage
V DD
4.5
—
18
V
Power Supply Current
I S
I S
—
—
1.0
0.15
2.0
0.25
mA
mA
V IN = 3V (Both inputs)
V IN = 0V (Both inputs)
Note 1:
2:
3:
Switching times ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area on the PCB.
? 2007 Microchip Technology Inc.
DS21998B-page 3
相关PDF资料 |
PDF描述 |
|---|---|
| TC4428AEUA713 | IC MOSFET DVR 1.5A DUAL HS 8MSOP |
| MSLB9082DCB | LED BCKLT DVR MOD 8CH I2C QFN |
| EBM15DRSD | CONN EDGECARD 30POS DIP .156 SLD |
| TC4428AEUA | IC MOSFET DVR 1.5A DUAL HS 8MSOP |
| TC4427AEUA713 | IC MOSFET DVR 1.5A DUAL HS 8MSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TC4423AVMF713 | 功能描述:功率驱动器IC 3A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4423AVOA | 功能描述:功率驱动器IC 3A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4423AVOA | 制造商:Microchip Technology Inc 功能描述:; LEADED PROCESS COMPATIBLE:YES; PEAK RE |
| TC4423AVOA713 | 功能描述:功率驱动器IC 3A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4423AVOE | 功能描述:功率驱动器IC 3A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。