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| 型号： | TC4424EOE |
| 厂商： | Microchip Technology |
| 文件页数： | 3/18页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 3A DUAL HS 16-SOIC |
| 标准包装： | 47 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 33ns |
| 电流 - 峰： | 3A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 管件 |
TC4423/TC4424/TC4425
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings ?
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B
................................................ (V DD + 0.3V) to (GND – 5V)
Package Power Dissipation (T A ≤ 70°C)
DFN ......................................................................... Note 2
PDIP .......................................................................730 mW
SOIC.......................................................................470 mW
? Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T A = +25°C, with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘ 1 ’, High Input Voltage
Logic ‘ 0 ’, Low Input Voltage
V IH
V IL
2.4
—
—
—
—
0.8
V
V
Input Current
I IN
–1
—
1
μA
0V ≤ V IN ≤ V DD
Output
High Output Voltage
Low Output Voltage
V OH
V OL
V DD – 0.025
—
—
—
—
0.025
V
V
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection With-
R OH
R OL
I PK
I REV
—
—
—
—
2.8
3.5
3
>1.5
5
5
—
—
?
?
A
A
I OUT = 10 mA, V DD = 18V
I OUT = 10 mA, V DD = 18V
Duty cycle ≤ 2%, t ≤ 300 μsec.
stand Reverse Current
Switching Time (Note 1)
Rise Time
t R
—
23
35
ns
Figure 4-1 , Figure 4-2 ,
C L = 1800 pF
Fall Time
t F
—
25
35
ns
Figure 4-1 , Figure 4-2 ,
C L = 1800 pF
Delay Time
t D1
—
33
75
ns
Figure 4-1 , Figure 4-2 ,
C L = 1800 pF
Delay Time
t D2
—
38
75
ns
Figure 4-1 , Figure 4-2 ,
C L = 1800 pF
Power Supply
Power Supply Current
I S
—
1.5
2.5
mA
V IN = 3V (Both inputs)
—
0.15
0.25
V IN = 0V (Both inputs)
Note 1:
2:
Switching times ensured by design.
Package power dissipation is dependent on the copper pad area on the PCB.
? 2004 Microchip Technology Inc.
DS21421D-page 3
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| TC4424EOE713 | 功能描述:功率驱动器IC 3A Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4424EPA | 功能描述:功率驱动器IC 3A Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4424EPA | 制造商:Microchip Technology Inc 功能描述:IC MOSFET DRIVER DUAL 4424 DIP8 |
| TC4424M | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:3A Dual High-Speed Power MOSFET Drivers |
| TC4424MJA | 功能描述:功率驱动器IC 3A Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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