参数资料
型号: TC4424MJA
厂商: Microchip Technology
文件页数: 9/18页
文件大小: 0K
描述: IC MOSFET DVR 3A DUAL HS 8-CDIP
标准包装: 56
配置: 低端
输入类型: 非反相
延迟时间: 33ns
电流 - 峰: 3A
配置数: 2
输出数: 2
电源电压: 4.5 V ~ 18 V
工作温度: -55°C ~ 125°C
安装类型: 通孔
封装/外壳: 8-CDIP(0.300",7.62mm)
供应商设备封装: 8-CERDIP
包装: 管件
TC4423M/TC4424M/TC4425M
3.0
PIN DESCRIPTIONS
3.4
Output A (OUT A)
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
8-Pin
Symbol Description
CERDIP
OUT A is a CMOS, push-pull output that is capable of
sourcing and sinking 3A peaks of current (V DD = 18V).
The low output impedance ensures the gate of the
external MOSFET will stay in the intended state even
during large transients. This output also has a reverse
current latch-up rating of 1.5A.
1
2
NC
IN A
No connection
Input A
3.5
Supply Input (V DD )
3
4
5
6
7
GND
IN B
OUT B
V DD
OUT A
Ground
Input B
Output B
Supply input
Output A
V DD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local ceramic capacitor.
This bypass capacitor provides a localized low-
impedance path for the peak currents that are to be
provided to the load.
8
NC
No connection
3.6
Ground (GND)
GND is the device return pin. The ground pin(s) should
3.1
Input A (IN A)
have a low-impedance connection to the bias supply
source return. High peak currents will flow out the
IN A is a TTL/CMOS-compatible input that controls
OUT A. This input has 300 mV of hysteresis between
the high and low input levels that allows it to be driven
from slow rising and falling signals, as well as providing
noise immunity.
ground pin(s) when the capacitive load is being
discharged.
3.2
Input B (IN B)
IN B is a TTL/CMOS-compatible input that controls
OUT B. This input has 300 mV of hysteresis between
the high and low input levels that allows it to be driven
from slow rising and falling signals, as well as providing
noise immunity.
3.3
Output B (OUT B)
OUT B is a CMOS push-pull output that is capable of
sourcing and sinking 3A peaks of current (V DD = 18V).
The low output impedance ensures the gate of the
external MOSFET will stay in the intended state even
during large transients. This output also has a reverse
current latch-up rating of 1.5A.
? 2005 Microchip Technology Inc.
DS21937A-page 9
相关PDF资料
PDF描述
TC4425VMF IC MOSFET DVR 3A DUAL HS 8DFN
TC4427MJA IC MOSFET DVR 1.5A DUAL HS 8CDIP
TC4428VUA713 IC MOSFET DVR 1.5A DUAL HS 8MSOP
TC4429VPA IC MOSFET DRIVER 6A HS 8DIP
TC4432VOA713 IC MOSFET DRIVER 30V 1.5A 8SOIC
相关代理商/技术参数
参数描述
TC4424VG 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:3A Dual High-Speed Power MOSFET Drivers
TC4424VMF 功能描述:功率驱动器IC 3A Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4424VMF713 功能描述:功率驱动器IC 3A Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4424VOE 功能描述:功率驱动器IC 3A Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4424VOE713 功能描述:功率驱动器IC 3A Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube