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| 型号： | TC4426MJA |
| 厂商： | Microchip Technology |
| 文件页数： | 9/18页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 1.5A DUAL HS 8CDIP |
| 标准包装： | 56 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 20ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-CDIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-CERDIP |
| 包装： | 管件 |
| 其它名称： | 158-1028 158-1028-ND |
TC4426M/TC4427M/TC4428M
3.0
PIN DESCRIPTIONS
3.3
Output A & B (OUT A and OUT B)
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
8-Pin
Symbol Description
CERDIP
1 NC No connection
2 IN A Input A
MOSFET drivers OUT A & B are low-impedance,
CMOS push-pull style outputs. The pull-down and pull-
up devices are of equal strength, making the rise and
fall times equivalent.
3.4 Supply Input (V DD )
The V DD input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
3
4
5
6
7
8
GND
IN B
OUT B
V DD
OUT A
NC
Ground
Input B
Output B
Supply input
Output A
No connection
pin. The V DD input should be bypassed with local
ceramic capacitors. The value of these capacitors
should be chosen based on the capacitive load that is
being driven. A value of 1.0 μF is suggested.
3.1
Inputs A & B (IN A and IN B)
MOSFET drivers IN A & B are high-impedance, TTL/
CMOS-compatible inputs. These inputs also have
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.2
Ground (GND)
GND is the device return pin. The ground pin(s) should
have a low-impedance connection to the bias supply
source return. High peak currents will flow out of the
ground pin(s) when the capacitive load is being
discharged.
? 2005 Microchip Technology Inc.
DS21938A-page 9
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